Resources Contact Us Home
Method of fabricating semiconductor device

Image Number 4 for United States Patent #8426285.

An ion implantation is performed to implant ions into a silicon substrate, and a microwave irradiation is performed to irradiate the silicon substrate with microwaves after the ion implantation. After the microwave irradiation, the silicon substrate is transferred to a heat-treatment apparatus, where the silicon substrate is treated with heat by being irradiated with light having a pulse width ranging from 0.1 milliseconds to 100 milliseconds, both inclusive.

  Recently Added Patents
Detecting mirrors on the web
Signal processing apparatus, display apparatus having the same, and signal processing method
Methods and apparatus for adapting network characteristics in telecommunications systems
Rotation angle detecting device
Triazine ring-containing polymer and film-forming composition comprising same
Aggregating completion messages in a sideband interface
Expressive grouping for language integrated queries
  Randomly Featured Patents
Method of making an aperture plate for a multibeam pattern drawing apparatus
5 or 1'-Hydroxy-2-alkyl-7,8-cyclopentano[h]-1,2,3,4-tetrahydroisoquinolines and esters
Selective routing
Laminated base film for photographic film
Plant promoter sequences and methods of use for same
Lantana plant named `Balandroglo`
Display device and display method
Mobile communication terminal test system, analysis method, and analysis program
Method and apparatus for high-resolution optical scanning of a sample
Electrochemical separation and concentration of sulfur containing gases from gas mixtures