Resources Contact Us Home
Method of fabricating semiconductor device

Image Number 3 for United States Patent #8426285.

An ion implantation is performed to implant ions into a silicon substrate, and a microwave irradiation is performed to irradiate the silicon substrate with microwaves after the ion implantation. After the microwave irradiation, the silicon substrate is transferred to a heat-treatment apparatus, where the silicon substrate is treated with heat by being irradiated with light having a pulse width ranging from 0.1 milliseconds to 100 milliseconds, both inclusive.

  Recently Added Patents
Method for transmitting a signal from a transmitter to a receiver in a power line communication network, transmitter, receiver, power line communication modem and power line communication syst
High-density 3-dimensional structure
Methods circuits apparatuses and systems for facilitating access to online content
Floor relief for dot improvement
Login security with short messaging
Process and intermediates for preparing lapatinib
Method and apparatus for linking a web browser link to a promotional offer
  Randomly Featured Patents
Low-pressure mercury vapor discharge lamp
Magneto-optical recording apparatus having a magnetic head with a regulating member
Magnetic memory element, magnetic memory and initializing method
Method and control system for updating of control parameter value indicative of master clutch point of incipient engagement
Pipe racking system track cover
Methods and systems for providing group calls with reduced setup times
Vibration damper using a rotary mechanism for all tennis rackets
Gas pressure regulator
System for applying a high voltage source to a CRT through a capacitive load
Spergualin-related compound and use thereof