Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of fabricating semiconductor device










Image Number 10 for United States Patent #8426285.

An ion implantation is performed to implant ions into a silicon substrate, and a microwave irradiation is performed to irradiate the silicon substrate with microwaves after the ion implantation. After the microwave irradiation, the silicon substrate is transferred to a heat-treatment apparatus, where the silicon substrate is treated with heat by being irradiated with light having a pulse width ranging from 0.1 milliseconds to 100 milliseconds, both inclusive.








 
 
  Recently Added Patents
Information processing apparatus, information outputting method and computer program storage device
Scalable pixel coverage function-map
Magnetic element with top shield coupled side shield lamination
Method of controlling semiconductor device, signal processing method, semiconductor device, and electronic apparatus
Breathing mask
Timing and cell specific system information handling for handover in evolved UTRA
Ni-, Co-, and Mn- multi-element doped positive electrode material for lithium battery and its preparation method
  Randomly Featured Patents
Electronic watt and/or watthour measuring circuit having active load terminated current sensor for sensing current and providing automatic zero-offset of current sensor DC offset error potenti
Antenna on a wireless untethered device such as a chip or printed circuit board for harvesting energy from space
Forearm protector for medical, dental and other health care workers
Portable hot-press for thermowelding marked and/or printed foils of thermoplastic synthetic material
Collapsible chair formed from sheet material
Transmission of compression identifier of headers on data packet connection
Semiconductor device having IGBT and diode
Palladium-based catalysts
Mount assembly for use with vibration transducers
Plasma CVD apparatus for manufacturing a semiconductor device