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Method for removing dummy poly in a gate last process

Image Number 8 for United States Patent #8415254.

A method is provided for fabricating a semiconductor device. The method includes removing a silicon material from a gate structure located on a substrate through a cycle including: etching the silicon material to remove a portion thereof, where the substrate is spun at a spin rate, applying a cleaning agent to the substrate, and drying the substrate; and repeating the cycle, where a subsequent cycle includes a subsequent spin rate for spinning the substrate during the etching and where the subsequent spin rate does not exceed the spin rate of the previous cycle.

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