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Method and apparatus for manufacturing semiconductor substrate dedicated to semiconductor device, and method and apparatus for manufacturing semiconductor device










Image Number 4 for United States Patent #8357592.

A method for manufacturing a semiconductor substrate dedicated to a semiconductor device, in which multi-photon absorption is generated in a micro-region inside the semiconductor substrate by condensing laser beams in any micro-region inside the semiconductor substrate, and a gettering sink is formed by changing the crystal structure of only the micro-region.








 
 
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