Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers










Image Number 5 for United States Patent #8357575.

In a replacement gate approach, the sacrificial gate material is exposed on the basis of enhanced process uniformity, for instance during a wet chemical etch step or a CMP process, by forming a modified portion in the interlayer dielectric material by ion implantation. Consequently, the damaged portion may be removed with an increased removal rate while avoiding the creation of polymer contaminants when applying an etch process or avoiding over-polish time when applying a CMP process.








 
 
  Recently Added Patents
Enterprise seamless mobility
Wireless communication system, wireless communication device, wireless communication method, and program
Latch-up free ESD protection
Methods of fabricating semiconductor device
Communications in an asynchronous cellular wireless network
Chromene compound
Cathode active material and lithium secondary battery comprising the same
  Randomly Featured Patents
Coating compositions, articles, and methods of coating articles
Granular magnesium salts
Porous ceramic honeycomb articles and methods for making the same
Grease filter
Power supply
Method for producing isopentene
Process and apparatus for automatic positioning of a substrate on a worktable
Controller for maintaining a constant temperature of discharged liquid
Vehicular use cooling apparatus
Rotary harrow