Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Integrated process for thin film resistors with silicides










Image Number 3 for United States Patent #8338914.

The formation of devices in semiconductor material is provided using an HF/HCL cleaning process. In one embodiment, the method includes forming at least one hard mask overlaying at least one layer of resistive material, forming at least one opening to a working surface of a silicon substrate of the semiconductor device, and cleaning the semiconductor device with a diluted HF/HCL process. The HF/HCL process includes applying a dilute of HF for a select amount of time and applying a dilute of HCL for a specific amount of time. After cleaning with the diluted HF/HCL process, a silicide contact junction is formed in the at least one opening to the working surface of the silicon substrate, and interconnect metal layers are formed.








 
 
  Recently Added Patents
Implantable medical devices including elongated conductor bodies that facilitate device and lead configuration variants
Controller for soldering iron
Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same
Device in a system operating with CAN-protocol and in a control and/or supervision system
Photographic printing paper and method of making same
Defect detection system and method
Method for fabrication of a semiconductor device and structure
  Randomly Featured Patents
Induction foil cap sealer
Bracket for mounting an electrical outlet box
Benzenesulfonamides as herbicides
Method for producing friction plate and apparatus therefor
Welding mask
Air flow rate measuring device for an internal combustion engine
Drug delivery management system
Printer with an ink container and an ink remainder detector
Optical module
IC memory card having flash memory