Resources Contact Us Home
Integrated process for thin film resistors with silicides

Image Number 2 for United States Patent #8338914.

The formation of devices in semiconductor material is provided using an HF/HCL cleaning process. In one embodiment, the method includes forming at least one hard mask overlaying at least one layer of resistive material, forming at least one opening to a working surface of a silicon substrate of the semiconductor device, and cleaning the semiconductor device with a diluted HF/HCL process. The HF/HCL process includes applying a dilute of HF for a select amount of time and applying a dilute of HCL for a specific amount of time. After cleaning with the diluted HF/HCL process, a silicide contact junction is formed in the at least one opening to the working surface of the silicon substrate, and interconnect metal layers are formed.

  Recently Added Patents
Display system, display control method and computer program
Power or voltage oscillation damping in a power transmission system
Salts and polymorphs of desazadesferrithiocin polyether analogues as metal chelation agents
Integrated bug tracking and testing
Probe for ultrasound diagnostic apparatus
Identifying a characteristic of an individual utilizing facial recognition and providing a display for the individual
  Randomly Featured Patents
Particulate multicomponent soil additive
Filling apparatus for gas bottle valves
Method and system for introduction of an active material to a chemical process
System and method for verifying database security across multiple platforms
System and method for single transparent deployment flow
Method, apparatus, and computer usable program code for migrating virtual adapters from source physical adapters to destination physical adapters
Sensorimotor coordinator
Magnetically responsive composition for carrying biologically active substances and methods of production and use
Suspension device for seat
Method and apparatus for remotely booting a computer system