Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Integrated process for thin film resistors with silicides










Image Number 2 for United States Patent #8338914.

The formation of devices in semiconductor material is provided using an HF/HCL cleaning process. In one embodiment, the method includes forming at least one hard mask overlaying at least one layer of resistive material, forming at least one opening to a working surface of a silicon substrate of the semiconductor device, and cleaning the semiconductor device with a diluted HF/HCL process. The HF/HCL process includes applying a dilute of HF for a select amount of time and applying a dilute of HCL for a specific amount of time. After cleaning with the diluted HF/HCL process, a silicide contact junction is formed in the at least one opening to the working surface of the silicon substrate, and interconnect metal layers are formed.








 
 
  Recently Added Patents
Distylium plant named `PIIDIST-I`
Aspect ratio enhancement
Method for producing male sterile plants using plant beclin 1/ATG6 expression
Television receiver
Pyridazine compounds for controlling invertebrate pests
Enzymatic demethylation of flavonoids
Semiconductor device and method of manufacturing the same
  Randomly Featured Patents
Process related to pulp bleaching effluent purification using ion exchange resins
Trail marking device
Address mapping mechanism for behavioral memory enablement within a data processing system
Conventive smoke filtering cleaner
Thin film transistor, method for fabricating the same and display device
System and method for administration of life insurance policy with accelerated benefits
Nasal dilator
Remote controller
Process of manufacturing nanocrystalline powders and molded bodies
Measuring system with a flow conditioner for flow profile stabilization