Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Integrated process for thin film resistors with silicides










Image Number 14 for United States Patent #8338914.

The formation of devices in semiconductor material is provided using an HF/HCL cleaning process. In one embodiment, the method includes forming at least one hard mask overlaying at least one layer of resistive material, forming at least one opening to a working surface of a silicon substrate of the semiconductor device, and cleaning the semiconductor device with a diluted HF/HCL process. The HF/HCL process includes applying a dilute of HF for a select amount of time and applying a dilute of HCL for a specific amount of time. After cleaning with the diluted HF/HCL process, a silicide contact junction is formed in the at least one opening to the working surface of the silicon substrate, and interconnect metal layers are formed.








 
 
  Recently Added Patents
Synchronization of sound generated in binaural hearing system
Reticle for a riflescope or other projectile-weapon aiming device
Reconstruction of deforming surfaces by canceling ambient occlusion and refining 3-D shape
Semiconductor device and method of forming discontinuous ESD protection layers between semiconductor die
Detection system and method for mobile device application
Dual use photovoltaic system
Reception system including a mechanism countering pulsed interference
  Randomly Featured Patents
Multi-band hybrid SOA-Raman amplifier for CWDM
Ear set for a cellular phone
Hair cosmetic composition
Formation of a fabric seam by ultrasonic gap welding of a flat woven fabric
Tubular belt conveyor
Method of and apparatus for generating hydrogen and projectile accelerating apparatus and method incorporating same
Apparatus and method of oxidation utilizing a gliding electric arc
Polyester resins capable of forming containers having improved gas barrier properties
Atomic force microscope employing beam-tracking
Method for simulating numerically controlled milling using adaptively sampled distance fields