Resources Contact Us Home
Integrated process for thin film resistors with silicides

Image Number 13 for United States Patent #8338914.

The formation of devices in semiconductor material is provided using an HF/HCL cleaning process. In one embodiment, the method includes forming at least one hard mask overlaying at least one layer of resistive material, forming at least one opening to a working surface of a silicon substrate of the semiconductor device, and cleaning the semiconductor device with a diluted HF/HCL process. The HF/HCL process includes applying a dilute of HF for a select amount of time and applying a dilute of HCL for a specific amount of time. After cleaning with the diluted HF/HCL process, a silicide contact junction is formed in the at least one opening to the working surface of the silicon substrate, and interconnect metal layers are formed.

  Recently Added Patents
Package for a medicinal product
Co-map communication operator
Laser processing a multi-device panel
Electric separator, method for the production and use thereof
Lighting elements
Integrated circuit packaging system with laser hole and method of manufacture thereof
Semiconductor device
  Randomly Featured Patents
Anisotropic filtering
Rollable container
Container for holding impression material
Apparatus for detecting the angle of rotation for a throttle valve operated by means of an electric motor
Non-volatile electromechanical configuration bit array
UV curable coating material of encapsulated water dispersed core material
Carburetor metering system and wick
System of a plurality of series-connected fuel cell converter devices and method for controlling the system
Television apparatus
Apparatus for refining ferrous melt with slag conditioning