Resources Contact Us Home
Field-effect transistor

Image Number 8 for United States Patent #8264002.

An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.

  Recently Added Patents
Method of fabricating solid electrolytic capacitor and solid electrolytic capacitor
Asynchronous task execution
Conductor for transmitting electrical power
System and method for ensuring compliance with organizational policies
Efficient forward ranking in a search engine
Integrated circuit packaging system with heat slug and method of manufacture thereof
Image generation device with optimized dose control
  Randomly Featured Patents
Belt seaming
Sulphur recovery process
Apparatus and method for practicing golf ball putting
Soap bar
Track-and-hold circuit for analog-to-digital converter with switched capacitor coupling of amplifier stage
Moisture separator for steam generator level measurement system
Method and device for preventing collisions with the ground for an aircraft
Cosmetics brush
Storage battery memory and communication device
Device for guying a movable cutting machine