Resources Contact Us Home
Field-effect transistor

Image Number 5 for United States Patent #8264002.

An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.

  Recently Added Patents
Method for manufacturing a turbine engine vane
Composition comprising a mixture of dextro- and levo-amphetamines complexed with ion-exchange resin particles to form drug resin particles
Solid-state imaging apparatus and imaging system
Method and system for billing based on color component histograms
Carrier or transport strip
Critical word forwarding with adaptive prediction
LED driving circuit, LED illumination appliance, LED illuminator, and LED illumination system
  Randomly Featured Patents
Filter material for removal of ozone from the atmosphere
Machine for splining clutch hubs
Microwave oven
Metal section
Active matrix liquid crystal having a counterelectrode substrate extended and connected to an external circuit
Survivability enhancement air vehicle
Fuel combustion method and burner for furnace use
Passive water management fuel cell
System and method for implementing protocol stack across multiple chassis
Furo(3,4-e)-as-triazines and corresponding 4-oxides