Resources Contact Us Home
Field-effect transistor

Image Number 3 for United States Patent #8264002.

An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.

  Recently Added Patents
Real-time demand prediction in a fast service restaurant environment
Data converter with configurable functions
Secure soft SIM credential transfer
System and method for investing public deposits
Method of measuring a displacement amount for an automobile suspension assembly
Memory with separate read and write paths
Plants and seeds of hybrid corn variety CH514730
  Randomly Featured Patents
Wood chipper
Tablet dispensing device
Self-propelled sweeper including a front steering axle
Portable animal pen and gate structure
Device for evaluating in vitro cell migration under flow conditions, and methods of use thereof
Injection molding die apparatus for use in the production of substrate of optical disk
Modified anticholinergic neurotoxins as modulators of the autoimmune reaction
Adaptable smart warhead and method for use
Leak-tight system for boxes containing electrical and electronic components
Playing card holder