Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Field-effect transistor










Image Number 13 for United States Patent #8264002.

An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.








 
 
  Recently Added Patents
Communication system including relay station and data frame for the communication system
Method and device for reliable estimation of network traffic
Method for forming contact in an integrated circuit
Fabrication method of semiconductor device and fabrication method of dynamic threshold transistor
Minimizing mismatch during compensation
Camera with monitor
Multi-chip package with a supporting member and method of manufacturing the same
  Randomly Featured Patents
Communications architecture interface
Clutch cover assembly manufacturing method
Side lock apparatus for storages
Preparation of tri-iodo benzene compounds
Blending of exposure-bracketed images using weight distribution functions
Tire with extended flange seat
Low dielectric constant porous films
Mechanisms to update a serving base station with the CSG memberships of a mobile station
Cable communication systems and methods employing QAM upstream channels below 16.4 MHz for increased aggregate deployed upstream capacity to support voice and/or data services
Bicyclic nitrogen heterocyclic ethers and thioethers, and their pharmaceutical uses