Resources Contact Us Home
Semiconductor device

Image Number 5 for United States Patent #8227856.

Provided is an ESD protection element, in which: LOCOS oxide films are formed at both ends of a gate electrode, and a conductivity type of a diffusion layer formed below one of the LOCOS oxide films which is not located on a drain side is set to a p-type, to thereby limit an amount of a current flowing in a portion below a source-side n-type high concentration diffusion layer, the current being generated due to surface breakdown of a drain. With this structure, even in a case of protecting a high withstanding voltage element, it is possible to easily satisfy a function required for the ESD protection element, the function of being constantly in an off-state during a steady state, while operating, upon application of a surge or noise to a semiconductor device, so as not to reach a breakage of an internal element, discharging a generated large current, and then returning to the off-state again.

  Recently Added Patents
Liquid low temperature injection molding process
System and method for operating an electric power converter
Modification of an object replica
Cycloalkylamine substituted isoquinoline derivatives
Lock monitoring
Terminal device, system and computer readable medium
Light receiving element with offset absorbing layer
  Randomly Featured Patents
Ignition system for internal combustion engines
Process for producing optically active 1-alkyl-substituted 2,2,2-trifluoroethylamine
Power supply device having communication channels with different types of communication connections
Optimized deterministic bearings only target motion analysis technique
Protective system for intermittently operating semiconductor switch
Method for conducting an on-line bidding session with bid pooling
Process for the methyl-4-(dimethylamino)-3,5-dimethoxybenzoate
Method for fabricating liquid crystal display device
Plastic-molded semiconductor device
Test device