Resources Contact Us Home
Method of fabricating an epitaxially grown layer

Image Number 6 for United States Patent #8216368.

A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A remainder portion of the support substrate is detached at the region of weakness and an epitaxial layer is grown on the nucleation portion. The remainder portion is separated or otherwise removed from the support portion.

  Recently Added Patents
Method of processing data and display apparatus for performing the method
Container pack
Compound semiconductor device and manufacturing method therefor
Sacrificial spacer approach for differential source/drain implantation spacers in transistors comprising a high-k metal gate electrode structure
Low-coupling oxide media (LCOM)
Method and device for the detection of defects or correction of defects in machines
Tree drain grate
  Randomly Featured Patents
Apparatus for controlling two crossed proportional adjusting devices by means of a single control stick
Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
Process for the preparation of poly(arylene sulfide) compositions
Cowling closing device
Glyphosate tolerant perennial ryegrass named `replay`
Systems and methods for providing multiple simultaneous calls from the same prepaid account
Gemstone or ornamental object made of glass
Linerless closure
Thermomagnetic recording method applying power modulated laser on a magnetically coupled multi-layer structure of perpendicular anisotropy magnetic film
Mechanical toy robot