Resources Contact Us Home
Semiconductor device and manufacturing method thereof

Image Number 14 for United States Patent #8198674.

To provide a semiconductor device including a first silicon pillar, an interlayer dielectric film provided on an upper surface of the first silicon pillar and having a through-hole filled with a conductive material, and a first-diffusion-layer contact plug provided on an upper-side opening of the through-hole. An area of a lower-side opening of the through-hole is equal to an area of the upper surface of the first silicon pillar, and an area of the upper-side opening of the through-hole is larger than the area of the lower-side opening of the through-hole. With this configuration, an area of a contact surface between the conductive material within the through-hole and the first-diffusion-layer contact plug is larger than the area of the upper surface of the first silicon pillar.

  Recently Added Patents
Playback device, playback method, and computer program
Isoselective polymerization of epoxides
Method for treating wounds for mammals, wound healer compound, and method of manufacturing thereof
Method for producing carrier on which microorganisms capable of conducting multiple parallel mineralization are immobilized, column reactor and solid medium for cultivating plants
Thermosensitive recording medium
Signal processing apparatus, display apparatus having the same, and signal processing method
Rechargeable battery including a channel member
  Randomly Featured Patents
Connecting flange, particularly for an electric terminal
Pseudo-Schottky diode
Method and apparatus for application of proximity correction with relative segmentation
Method and apparatus for bump inspection
Semiconductor memory device
Adjustable drawer mounting assembly
Semi-automated desk checking system and method
Methods and compositions of controlling the rheology of a diutan-containing well treatment fluid at high temperatures
Compact read/write head having biased GMR element