Resources Contact Us Home
Semiconductor device and manufacturing method thereof

Image Number 14 for United States Patent #8198674.

To provide a semiconductor device including a first silicon pillar, an interlayer dielectric film provided on an upper surface of the first silicon pillar and having a through-hole filled with a conductive material, and a first-diffusion-layer contact plug provided on an upper-side opening of the through-hole. An area of a lower-side opening of the through-hole is equal to an area of the upper surface of the first silicon pillar, and an area of the upper-side opening of the through-hole is larger than the area of the lower-side opening of the through-hole. With this configuration, an area of a contact surface between the conductive material within the through-hole and the first-diffusion-layer contact plug is larger than the area of the upper surface of the first silicon pillar.

  Recently Added Patents
Image processing apparatus, image display apparatus, and image processing method
5-lipoxygenase-activating protein (FLAP) inhibitors
Subband SNR correction in a frequency selective scheduler
Catalyst compositions for hydroformylation reaction and hydroformylation process using the same
Television receiver
Automatic actuator for breakers or switches
Active metal fuel cells
  Randomly Featured Patents
Electric vehicle assembly circuit
Adsorption gas dryer
Modified superoxide dismutase
Seat with armrests adapted to support tray
Devices and related methods for securing a tissue fold
Thermomechanical sensor for fluid diagnostics
Increasing through-put of a storage controller by autonomically adjusting host delay
Methods and circuits for testing programmable logic
Method of detecting sleep apnea and treatment thereof
Miniature X-ray source device