Resources Contact Us Home
Semiconductor device and manufacturing method thereof

Image Number 14 for United States Patent #8198674.

To provide a semiconductor device including a first silicon pillar, an interlayer dielectric film provided on an upper surface of the first silicon pillar and having a through-hole filled with a conductive material, and a first-diffusion-layer contact plug provided on an upper-side opening of the through-hole. An area of a lower-side opening of the through-hole is equal to an area of the upper surface of the first silicon pillar, and an area of the upper-side opening of the through-hole is larger than the area of the lower-side opening of the through-hole. With this configuration, an area of a contact surface between the conductive material within the through-hole and the first-diffusion-layer contact plug is larger than the area of the upper surface of the first silicon pillar.

  Recently Added Patents
Soybean cultivar CL0911610
Sericin cationic nanoparticles for application in products for hair and dyed hair
Food-grade flour from dry fractionated corn germ and collet composition and method for producing same
Bamboo scrimber and manufacturing method thereof
Coordinated multi-point transmission in a cellular network
Multi-function wrench for a power tool
Aisle barrier
  Randomly Featured Patents
Seed corn sheller
Surface plasmon excitation device and microscope including the same
Process for making a lyophilized product for use in skeletal imaging
Unifying application launchers and switchers
Light emitting device with blue light LED and phosphor components
Nonwoven sheet material
Process for production of a carboxylic acid/diol mixture suitable for use in polyester production
1-aminophenyl-2-dimethylaminopropanone derivatives, method of preparation and use in therapy
Method of manufacturing semiconductor devices
Reel for fishing