Resources Contact Us Home
Semiconductor device and manufacturing method thereof

Image Number 14 for United States Patent #8198674.

To provide a semiconductor device including a first silicon pillar, an interlayer dielectric film provided on an upper surface of the first silicon pillar and having a through-hole filled with a conductive material, and a first-diffusion-layer contact plug provided on an upper-side opening of the through-hole. An area of a lower-side opening of the through-hole is equal to an area of the upper surface of the first silicon pillar, and an area of the upper-side opening of the through-hole is larger than the area of the lower-side opening of the through-hole. With this configuration, an area of a contact surface between the conductive material within the through-hole and the first-diffusion-layer contact plug is larger than the area of the upper surface of the first silicon pillar.

  Recently Added Patents
Cable sheath
Sensor coating
Organic light-emitting display with black matrix
Para-xylylene based microfilm elution devices
Vehicle headlight
Battery grid
Method of controlling an indentation depth of an electrode into a metal substrate during welding
  Randomly Featured Patents
Substituted pyridines and pyridazines with angiogenesis inhibiting activity
Circuit for automatic gain control with constant response time
Method and apparatus for relative pitch tracking of multiple arbitrary sounds
Eyewash system
Vision correction using intrastromal pocket and flap
Hand covering
Enzyme-modified soy and soy/casein combination healing compositions
Apparatus for controlling the drying of previously baked goods
Image drawing method, portable terminal, and computer program
Process for preparation of amidine derivatives