Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Magnetic tunnel junction (MTJ) formation with two-step process










Image Number 7 for United States Patent #8148174.

A method of manufacturing a magnetic memory element includes the steps of performing a first etching an oxide layer is etched, using a first photo-resist, the oxide layer formed on top of a contact layer that is formed on top of a magneto tunnel junction (MTJ), depositing a second photo-resist and second etching to leave a portion of the contact layer used to suitably connect the MTJ to circuits outside of the magnetic memory element.








 
 
  Recently Added Patents
Label printer
Combination for composite layered chip package
Pre-colored methodology of multiple patterning
Utilizing virtually stored media snapshots for rasterizing print jobs
Computer systems and methods for the query and visualization of multidimensional databases
Downhole telemetry system
Image processor
  Randomly Featured Patents
Production of papillomavirus capsid protein and virus-like particles
Semiconductor integrated circuit capable of facilitating layout modification
Tube connection assembly of bicycle frame
Constrained keyboard organization
Leg pocket
Pharmaceutical compositions including low dosages of desmopressin
Decaffeination of green coffee with n-butyl acetate
Quantitative determination of bilirubin and a reagent therefor
P-ROM Cell having a low current fusible programming link
Toothbrush having signal producing means