Resources Contact Us Home
Magnetic tunnel junction (MTJ) formation with two-step process

Image Number 7 for United States Patent #8148174.

A method of manufacturing a magnetic memory element includes the steps of performing a first etching an oxide layer is etched, using a first photo-resist, the oxide layer formed on top of a contact layer that is formed on top of a magneto tunnel junction (MTJ), depositing a second photo-resist and second etching to leave a portion of the contact layer used to suitably connect the MTJ to circuits outside of the magnetic memory element.

  Recently Added Patents
Myoglobin blooming agents, films, packages and methods for packaging
Generating network topology parameters and monitoring a communications network domain
Display apparatus and control method thereof
Circuit arrangement having a load transistor and a voltage limiting circuit and method for driving a load transistor
Method and device for evaluating evolution of tumoural lesions
Human embryonic stem cell methods and PODXL expression
Antenna array system
  Randomly Featured Patents
Quad-28JW surface mount package
Thiazolidine-4-carboxylic acid derivatives as cytoprotective agents
Plasma display panel bus electrode structure
Methods, systems, and computer-program products to estimate scattered radiation in cone-beam computerized tomographic images and the like
System and method for reducing network signaling load in a radio telecommunications network
Method and apparatus for improving compiler performance during subsequent compilations of a source program
Gas torch with articulated and extendable body
Access control system
Marine structure
Test method for IgA nephropathy