Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Magnetic tunnel junction (MTJ) formation with two-step process










Image Number 7 for United States Patent #8148174.

A method of manufacturing a magnetic memory element includes the steps of performing a first etching an oxide layer is etched, using a first photo-resist, the oxide layer formed on top of a contact layer that is formed on top of a magneto tunnel junction (MTJ), depositing a second photo-resist and second etching to leave a portion of the contact layer used to suitably connect the MTJ to circuits outside of the magnetic memory element.








 
 
  Recently Added Patents
Search hit URL modification for secure application integration
Morphing panel structure
Method of improving semi-persistent scheduling resources reconfiguration in a wireless communication system and related communication device
Secondary battery
Process for preparing ethylene and propylene
Flash sector seeding to reduce program times
Home appliance
  Randomly Featured Patents
Seat
Screw head cover
Information processing apparatus, KVM switch, remote system, and computer readable storage medium
Diesel particulate filter pulse cleaner flow director system and method
Telephone set with moveable display
Optical gas and/or particulate sensors
Loudspeakers
Crop harvesting method and apparatus
Digital signal recording apparatus
Copper alloy for electrical or electronic parts