Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Magnetic tunnel junction (MTJ) formation with two-step process










Image Number 2 for United States Patent #8148174.

A method of manufacturing a magnetic memory element includes the steps of performing a first etching an oxide layer is etched, using a first photo-resist, the oxide layer formed on top of a contact layer that is formed on top of a magneto tunnel junction (MTJ), depositing a second photo-resist and second etching to leave a portion of the contact layer used to suitably connect the MTJ to circuits outside of the magnetic memory element.








 
 
  Recently Added Patents
Timing and cell specific system information handling for handover in evolved UTRA
Defected ground plane inductor
Magnetoresistive element and manufacturing method of the same
Techniques for data assignment from an external distributed file system to a database management system
Video processing system and device with encoding and decoding modes and method for use therewith
Flash drive
Specimen preparation device, and control method in specimen preparation device
  Randomly Featured Patents
Cardiac recovery
Biasing scheme for improving latitudes in the tri-level xerographic process
Aerodynamic aerial conductor vibration damper
Nitric oxide releasing derivatives of paracetamol
Beam irradiator and laser anneal device
Curved path chain link conveyor modules and belts
Shutter time compensation
Aqueous dispersions
Physical quantity sensor
Utilization of wool grease as well as drilling, grinding, or cutting emulsions