Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Magnetic tunnel junction (MTJ) formation with two-step process










Image Number 2 for United States Patent #8148174.

A method of manufacturing a magnetic memory element includes the steps of performing a first etching an oxide layer is etched, using a first photo-resist, the oxide layer formed on top of a contact layer that is formed on top of a magneto tunnel junction (MTJ), depositing a second photo-resist and second etching to leave a portion of the contact layer used to suitably connect the MTJ to circuits outside of the magnetic memory element.








 
 
  Recently Added Patents
Method and apparatus for managing network traffic
Normalized contextual performance metric for the assessment of fatigue-related incidents
LCD driving circuit in which shift register units are driven by a first clock signal of fixed duty/amplitude and a second clock signal of variable duty/amplitude
Processes for producing polyunsaturated fatty acids in transgenic organisms
Display panel and gate driving circuit and driving method for gate driving circuit
Method for the synthesis of an array of metal nanowire capable of supporting localized plasmon resonances and photonic device comprising said array
Refuelable battery-powered electric vehicle
  Randomly Featured Patents
Emulsion polymers free from emulsifiers and protective colloids, a process for their preparation and their use
Concealer and method of making same
Disposable garment with card tongue
Stabilization of poly(arylene ether ketones)
Methods for fabricating nonvolatile memory device
Combined vacuum cleaner hose and rack
Method of simultaneously manufacturing acrylic fibers and nitrates
Apparatus for controlling combustion device
Mounting unit
Mold for slip casting and method of slip casting