Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Magnetic tunnel junction (MTJ) formation with two-step process










Image Number 2 for United States Patent #8148174.

A method of manufacturing a magnetic memory element includes the steps of performing a first etching an oxide layer is etched, using a first photo-resist, the oxide layer formed on top of a contact layer that is formed on top of a magneto tunnel junction (MTJ), depositing a second photo-resist and second etching to leave a portion of the contact layer used to suitably connect the MTJ to circuits outside of the magnetic memory element.








 
 
  Recently Added Patents
Cineole
Mobile browser context switching
Information display
Optoelectronic semiconductor chip and method for manufacturing a contact structure for such a chip
Scalable packet processing systems and methods
Deposited conductive layers for leads of implantable electric stimulation systems and methods of making and using
Image stabilization
  Randomly Featured Patents
Device for improving the pourability of fluids and also forming an improved closure for a container of such fluids
Method of fabricating a bipolar transistor having a high ion concentration buried floating collector
Ring-post fastener
Multi-dog log carriage
System and method for rendering an oblique slice through volumetric data accessed via a client-server architecture
Front axle air suspension
Built-in core body in ready-made knot of necktie
System and method for verifying trace widths of a PCB layout
Mine refuge
Moistener for intake air of internal combustion machines with turbocharging