Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Magnetic tunnel junction (MTJ) formation with two-step process










Image Number 2 for United States Patent #8148174.

A method of manufacturing a magnetic memory element includes the steps of performing a first etching an oxide layer is etched, using a first photo-resist, the oxide layer formed on top of a contact layer that is formed on top of a magneto tunnel junction (MTJ), depositing a second photo-resist and second etching to leave a portion of the contact layer used to suitably connect the MTJ to circuits outside of the magnetic memory element.








 
 
  Recently Added Patents
Memory circuit and method of forming the same using reduced mask steps
Single mode optical fiber with improved bend performance
Aspect ratio enhancement
Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip
Extreme ultraviolet light generation apparatus
Client-managed group communication sessions within a wireless communications system
Systems and methods for tracking mobile terrestrial terminals for satellite communications
  Randomly Featured Patents
Switchable volume hologram materials and devices
System for improving PCI write performance
Dual transmission spread processing circuit system for CDMA communication apparatus
Communication system and communication control method
Multi-component projectile-propelling toy weapon
Band pass speaker
HTML/XML tree synchronization
Infrared thermography system including mobile unit
Shaped articles of hydraulic cement compositions and method of making same
Reactive derivative of zirconium and its preparation