Resources Contact Us Home
Magnetic tunnel junction (MTJ) formation with two-step process

Image Number 2 for United States Patent #8148174.

A method of manufacturing a magnetic memory element includes the steps of performing a first etching an oxide layer is etched, using a first photo-resist, the oxide layer formed on top of a contact layer that is formed on top of a magneto tunnel junction (MTJ), depositing a second photo-resist and second etching to leave a portion of the contact layer used to suitably connect the MTJ to circuits outside of the magnetic memory element.

  Recently Added Patents
Accessing device via communication protocol selection
Data processing circuit with arbitration between a plurality of queues
Corner wrap for use with a pallet
Chemical method of making a suspension, emulsion or dispersion of pyrithione particles
Medical device arm
Active metal fuel cells
Method and system for the geolocation of a radio beacon in a search and rescue system
  Randomly Featured Patents
Process for the reduction of cinnamaldehyde derivative employing enoate reductases
Tool holder
Improved notching shear for notching woven textile fabric or other flexible or pliable sheet material
Magnetic recording medium
Azeotrope compositions comprising 2,3,3,3-tetrafluoropropene and hydrogen fluoride and uses thereof
Controlled release local anesthetic for post dental surgery and method of use
Functional MRI agents for cancer imaging
File server and file server controller
Universal memory loader verifier
Method of blasting process