Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for forming pattern of semiconductor device










Image Number 7 for United States Patent #8143163.

A method for manufacturing a semiconductor device comprises performing a CMP process using an oxide film as an etching barrier film to maintain a polysilicon layer having a large open area. A word line pattern, a DSL pattern, and a SSL pattern that are formed by a first patterning process are not additionally blocked, and the oxide film is used as an etching barrier to obtain an accurate overlay between patterns and improve CD uniformity, thereby improving a characteristic of the device.








 
 
  Recently Added Patents
Preamplifier-to-channel communication in a storage device
Question and answer system wherein experts are associated with models and have response rates that are associated with time intervals
Methods and compositions for inhibition of neutrophil exocytosis
Self-assembled, micropatterned, and radio frequency (RF) shielded biocontainers and their uses for remote spatially controlled chemical delivery
Electronic component and reflected-wave cancelling method
Systems and methods for minimization or elimination of diffusion effects in a microfluidic system
Determining ill conditioning in square linear system of equations
  Randomly Featured Patents
Vacuum distillation system and use thereof for concentrating organic-aqueous solvent mixtures
Use of dendrimeric-type macromolecules as catalysts or coadjuvants in phase transfer catalysis reactions
Generic encryption technique for communication networks
Nucleoside triphosphate-dependent 1-methylhydantoinase, a process for obtaining it and the use thereof
Angled profile
Cleaning pad having colored strip(s)
Modular power control system with multipin connectors and airflow conrol module
Apparatus and method for thickening pulp and paper stock
Upstream guide for peeling machine
Process for manufacturing a lead frame capacitor and capacitively-coupled isolator circuit using same