Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for forming pattern of semiconductor device










Image Number 7 for United States Patent #8143163.

A method for manufacturing a semiconductor device comprises performing a CMP process using an oxide film as an etching barrier film to maintain a polysilicon layer having a large open area. A word line pattern, a DSL pattern, and a SSL pattern that are formed by a first patterning process are not additionally blocked, and the oxide film is used as an etching barrier to obtain an accurate overlay between patterns and improve CD uniformity, thereby improving a characteristic of the device.








 
 
  Recently Added Patents
Systems and/or methods for using air/wind power to charge/re-charge vehicle batteries
Method for etched cavity devices
Respirator belt having bumper cushion
Dyes and methods of marking biological material
Integrated circuit packaging system with interconnects and method of manufacture thereof
Pressure-sensitive adhesive composition having an improved release behavior
Method and system for remotely testing a wireless device
  Randomly Featured Patents
Deterministic program clock reference re-stamping for synchronous bit rate adaptation based on mega-frame initialization packet
Injection molding method for multi-layer bottomed parisons
Module holder
Apparatus and method for storing sleeves for rotary printing machines
Dynamic mixer process with continuous caustic phase for removal of elemental sulfur from organic fluids
Permutation type lock control assembly
Biocompatible mouldable polymeric material
Non-volatile memory and method for power-saving multi-pass sensing
Distillation column with helical liquid flow and dissymmetric spacing of the trays
Method of manufacturing silicon carbide semiconductor device