Resources Contact Us Home
Method for forming pattern of semiconductor device

Image Number 7 for United States Patent #8143163.

A method for manufacturing a semiconductor device comprises performing a CMP process using an oxide film as an etching barrier film to maintain a polysilicon layer having a large open area. A word line pattern, a DSL pattern, and a SSL pattern that are formed by a first patterning process are not additionally blocked, and the oxide film is used as an etching barrier to obtain an accurate overlay between patterns and improve CD uniformity, thereby improving a characteristic of the device.

  Recently Added Patents
Sub-LUN input/output profiling for SSD devices
System and method for interactive image-based modeling of curved surfaces using single-view and multi-view feature curves
System, method and program recording medium for supply capacity estimation
Plants and seeds of corn variety CV092363
Apparatus for counting particles in a gas
Fuel cell system, and electric vehicle equipped with the fuel cell system
Switchable memory diodes based on ferroelectric/conjugated polymer heterostructures and/or their composites
  Randomly Featured Patents
Delivery vehicle for silver ions
Computer desk
Path shifting optical device having polarization correcting section and optical display system including same
Process for forming flexible fold lines in thermoplastic sheets
Signal shifting to allow independent control of identical stacked memory modules
Switch module
Multi-purpose tool
Vehicle parking brake cable actuating structure
Methods and apparatus supporting adaptive decentralized traffic scheduling including a dynamic transmitter yielding threshold
Fuel cell system