Resources Contact Us Home
Method for forming pattern of semiconductor device

Image Number 7 for United States Patent #8143163.

A method for manufacturing a semiconductor device comprises performing a CMP process using an oxide film as an etching barrier film to maintain a polysilicon layer having a large open area. A word line pattern, a DSL pattern, and a SSL pattern that are formed by a first patterning process are not additionally blocked, and the oxide film is used as an etching barrier to obtain an accurate overlay between patterns and improve CD uniformity, thereby improving a characteristic of the device.

  Recently Added Patents
Re-establishing push notification channels via user identifiers
Fire detector
Network attachment for IMS systems for legacy CS UE with home node B access
Denial of service (DoS) attack prevention through random access channel resource reallocation
Image processing apparatus
Method for generating optical codes for a print-context
Multibranched polymer and method for producing the same
  Randomly Featured Patents
Hanger extension kit
Vertical rotor braze joint with retention chamfer
Self-adjusting wedge bumper
Printer for computer
Semiconductor wafer polishing machine and wafer carrier therefor
Enema apparata improvements relating to double contrast studies
Information processing apparatus
Semiconductor device
Plants and seeds of corn variety CV197629
Method for the detection, localization and velocity determination of moving targets from raw radar data from a coherent, single- or multi-channel image system carried along in a vehicle