Resources Contact Us Home
Method for forming pattern of semiconductor device

Image Number 7 for United States Patent #8143163.

A method for manufacturing a semiconductor device comprises performing a CMP process using an oxide film as an etching barrier film to maintain a polysilicon layer having a large open area. A word line pattern, a DSL pattern, and a SSL pattern that are formed by a first patterning process are not additionally blocked, and the oxide film is used as an etching barrier to obtain an accurate overlay between patterns and improve CD uniformity, thereby improving a characteristic of the device.

  Recently Added Patents
Hypallergenic mosaic antigens and methods of making same
Method and apparatus for power management control of an embedded memory having sleep and shutdown features
Self-service channel marketplace
Method to trace video content processed by a decoder
Portable hand-held multi-function device for storing, managing and combining rewards
MEMS autofocus actuator
Taste receptors of the T1R family from domestic cat
  Randomly Featured Patents
Control device of inverters
Method of producing resin mold
Water inlet device for a faucet
Arc preventing power supply system
Seat frame for automobile seats
System for electrically connecting and disconnecting a vehicle generator from a vehicle storage unit
Methods for preventing or inhibiting neuronal cell death
Method and apparatus for preforming memory segment limit violation checks
Resistor network such as a resistor ladder network and a method for manufacturing such a resistor network