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Silicon carbide semiconductor device and manufacturing method thereof










Image Number 3 for United States Patent #8143094.

A manufacturing method of a silicon carbide semiconductor device in which an electric field applied to a gate oxide film can be relaxed and thereby reliability can be ensured, and by the method manufacturing costs can be reduced. Well regions, channel regions, and gate electrodes are formed so that, given that extending lengths, with respect to the inner sides of source regions, of each of the well regions, the channel regions, and the gate electrodes are Lwell, Lch, and Lg, respectively, a relationship of Lch<Lg<Lwell is satisfied; and the channel regions are further formed by diffusing by activation annealing boron as a third impurity, having been implanted by activation annealing into the source regions, into a silicon carbide layer.








 
 
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