Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device including a p-type transistor having extension regions in sours and drain regions and method of fabricating the same










Image Number 4 for United States Patent #8134159.

A semiconductor device according to one embodiment includes: a semiconductor layer formed on a semiconductor substrate; a gate electrode formed on the semiconductor layer via a gate insulating film; an impurity diffusion suppression layer formed between the semiconductor substrate and the semiconductor layer and including a C-containing Si-based crystal containing a first impurity, the C-containing Si-based crystal being configured to suppress diffusion of a second impurity having a p-type conductivity type, and the C-containing Si-based crystal with the first impurity having a function of suppressing generation of fixed charge in the C-containing Si-based crystal; and p-type source/drain regions formed in the semiconductor substrate, the impurity diffusion suppression layer and the semiconductor layer in sides of the gate electrode, the p-type source/drain region having an extension region in the semiconductor layer and containing the second impurity.








 
 
  Recently Added Patents
Contamination barrier
Highly detectable pilot structure
Method, apparatus or computer program for changing from scheduled to unscheduled communication modes
Method and composition for hyperthermally treating cells
Multi-dimensional credibility scoring
Multi-user remote health monitoring system with biometrics support
Cooler
  Randomly Featured Patents
Faceted stirring object for solid and liquid food substances
In vitro micro-organs, and uses related thereto
Capacitive displacement sensor
Graduated food-cutting knife and method of use thereof
Mandrel for formation of mass spectrometer filter
Purification device
Hub-disc interface reducing hub reloaded disc surface curvature
Method of manufacturing vertical power device
Positive resist composition containing quinone diazide sulfonate ester of vinylphenol compounds or isopropenylphenol compounds
Electrical arc flash protection blanket