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Superimpose photomask and method of patterning

Image Number 7 for United States Patent #8133661.

Provided is a photomask that includes a substrate having a first region and a second region, a first pattern disposed in the first region of the substrate, and a second pattern disposed in the second region of the substrate. The first and second patterns are a decomposition of a design pattern to be transferred onto a wafer in a lithography process.

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