Resources Contact Us Home
On-track process for patterning hardmask by multiple dark field exposures

Image Number 6 for United States Patent #8133659.

This invention provides methods of creating via or trench structures on a developer-soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using organic solvents, the same hardmask can be further patterned using subsequent exposure-development processes. Eventually, the pattern can be transferred to the substrate using an etching process.

  Recently Added Patents
High throughput thin film characterization and defect detection
Crowd control barrier II
Process for producing a plasma protein-containing medicament with reduced concentration of citrate and metals
Formwork release composition and use thereof
Etching apparatus and methods
Rose plant named `Esm R068`
Materials for organic electroluminescent devices containing substituted 10-benzo[c]phenanthrenes
  Randomly Featured Patents
Compact integrated infrared scene projector
Device for measuring thin films by means of beta radiation
Magnetic disk device and magnetic head slider
Time stamping transactions to validate atomic operations in multiprocessor systems
Page check for copier/printers
I.sup.2 L Sensing circuit with increased sensitivity
Method and device to determine out of coverage for mobile devices
Antiviral 1,3-dioxolane nucleoside analogues
FM canceler loop to reduce shock and vibration effects in crystal oscillators
Electrode structure of semiconductor element