Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
BIAS voltage generation circuit for an SOI radio frequency switch










Image Number 7 for United States Patent #8131225.

A radio frequency (RF) switch located on a semiconductor-on-insulator (SOI) substrate includes at least one electrically biased region in a bottom semiconductor layer. The RF switch receives an RF signal from a power amplifier and transmits the RF signal to an antenna. The electrically biased region may be biased to eliminate or reduce accumulation region, to stabilize a depletion region, and/or to prevent formation of an inversion region in the bottom semiconductor layer, thereby reducing parasitic coupling and harmonic generation due to the RF signal. A voltage divider circuit and a rectifier circuit generate at least one bias voltage of which the magnitude varies with the magnitude of the RF signal. The at least one bias voltage is applied to the at least one electrically biased region to maintain proper biasing of the bottom semiconductor layer to minimize parasitic coupling, signal loss, and harmonic generation.








 
 
  Recently Added Patents
Malicious attack detection and analysis
Active pulse blood constituent monitoring
Oscillation circuit
Configurable pitch reducing optical fiber array
Case
Managing personal information on a network
Switching element for a valve train of an internal combustion engine
  Randomly Featured Patents
Phase-compensated filter circuit with reduced power consumption
Method for manufacturing sensor frame for image sensor
Optical proximity correction method and apparatus
Rigid-flex wiring board
Dynamic cylindrical display for pen-sized computing
1,3,3-(Trisubstituted)cyclohex-1-ene dimers and related compounds
Personal digital assistant incorporating a printer
Method for producing polyhydroxyalkanoates in recombinant organisms
2,2,6,6-Tetramethylpiperidine derivatives
Temperature sensor and method of producing the same