Resources Contact Us Home
BIAS voltage generation circuit for an SOI radio frequency switch

Image Number 7 for United States Patent #8131225.

A radio frequency (RF) switch located on a semiconductor-on-insulator (SOI) substrate includes at least one electrically biased region in a bottom semiconductor layer. The RF switch receives an RF signal from a power amplifier and transmits the RF signal to an antenna. The electrically biased region may be biased to eliminate or reduce accumulation region, to stabilize a depletion region, and/or to prevent formation of an inversion region in the bottom semiconductor layer, thereby reducing parasitic coupling and harmonic generation due to the RF signal. A voltage divider circuit and a rectifier circuit generate at least one bias voltage of which the magnitude varies with the magnitude of the RF signal. The at least one bias voltage is applied to the at least one electrically biased region to maintain proper biasing of the bottom semiconductor layer to minimize parasitic coupling, signal loss, and harmonic generation.

  Recently Added Patents
Push button
Method and apparatus for generating soft bit values in reduced-state equalizers
Clock phase recovery apparatus
Method and apparatus for displaying system status with a wide range of viewing angle
Image quality assessment
Non-phosphorus-based gellant for hydrocarbon fluids
  Randomly Featured Patents
Adopting feature of buried electrically conductive layer in dielectrics for electrical anti-fuse application
Cooling abnormality detection system for electronic equipment
Automated transaction machine system and method
Lockable closure fastening and tamper evident closure
Method and apparatus for monitoring the output of a neutron detector
Performing measurement or calibration on positioning machines
Catalytic reactor
Powdered iron core magnetic devices
Method, memory system, and computer program product for implementing lock based delayed space recycle control
Extender for use with computer internal structure