Resources Contact Us Home
BIAS voltage generation circuit for an SOI radio frequency switch

Image Number 7 for United States Patent #8131225.

A radio frequency (RF) switch located on a semiconductor-on-insulator (SOI) substrate includes at least one electrically biased region in a bottom semiconductor layer. The RF switch receives an RF signal from a power amplifier and transmits the RF signal to an antenna. The electrically biased region may be biased to eliminate or reduce accumulation region, to stabilize a depletion region, and/or to prevent formation of an inversion region in the bottom semiconductor layer, thereby reducing parasitic coupling and harmonic generation due to the RF signal. A voltage divider circuit and a rectifier circuit generate at least one bias voltage of which the magnitude varies with the magnitude of the RF signal. The at least one bias voltage is applied to the at least one electrically biased region to maintain proper biasing of the bottom semiconductor layer to minimize parasitic coupling, signal loss, and harmonic generation.

  Recently Added Patents
Pet burial pod
Pet bed
Pressing mold for optical lenses and method for manufacturing glass optical lenses
Fine grain voltage scaling of back biasing
Phase locking loop
Imaging apparatus for calculating a histogram to adjust color balance
Ventilated vacuum commutation structure
  Randomly Featured Patents
Speed change device for bicycles
Dispenser housing
Refractomer and method for qualitative and quantitative measurements
Starch and fiber mixture for papermaking and methods of making paper with the mixture
Printed circuit board with through-holes including a test land having two current measuring lands and two resistance measuring lands
Apparatus for treating pulp in a pressurized state
Process for enhancing the chemiluminescence of enzyme-triggered 1,2-dioxetanes and uses therefor
Pharmaceutical composition
Disc cartridge with alignment elements on two hub halves
Power supply having automatic frequency control for ultrasonic bonding