Resources Contact Us Home
BIAS voltage generation circuit for an SOI radio frequency switch

Image Number 7 for United States Patent #8131225.

A radio frequency (RF) switch located on a semiconductor-on-insulator (SOI) substrate includes at least one electrically biased region in a bottom semiconductor layer. The RF switch receives an RF signal from a power amplifier and transmits the RF signal to an antenna. The electrically biased region may be biased to eliminate or reduce accumulation region, to stabilize a depletion region, and/or to prevent formation of an inversion region in the bottom semiconductor layer, thereby reducing parasitic coupling and harmonic generation due to the RF signal. A voltage divider circuit and a rectifier circuit generate at least one bias voltage of which the magnitude varies with the magnitude of the RF signal. The at least one bias voltage is applied to the at least one electrically biased region to maintain proper biasing of the bottom semiconductor layer to minimize parasitic coupling, signal loss, and harmonic generation.

  Recently Added Patents
Systems and methods for processing telephone calls
Efficient forward ranking in a search engine
Intrinsic absorber layer for photovoltaic cells
Print control server, print controlling method, and print control program
Solar power system with communication network utilizing magnetic fields
Pattern identification apparatus, control method and program thereof
Methods and systems for detecting icing conditions
  Randomly Featured Patents
Printed circuit mounting apparatus especially for use in luminaires
Surface treatment apparatus
Image drawing with improved process for area ratio of pixel
Electronic apparatus
Language independent suprasegmental pronunciation tutoring system and methods
Method and apparatus for copper corrosion prevention during wet clean
Technique for detecting a watermark in a marked image
Process for recirculating and purifying waste water from a vehicle washing installation
Band heater systems and assembly methods