Resources Contact Us Home
Semiconductor device

Image Number 11 for United States Patent #8129799.

A field-effect transistor (142) includes a lowly p-doped region 110 formed on a surface of a substrate (102), an n-doped drain region 112 and n-doped source region 114 arranged on a surface of the lowly p-doped region 110, and a device isolation insulating film 132 and device isolation insulating film 134. Here, the device isolation insulating film 132 is formed greater in film thickness than the device isolation insulating film 134; and in the n-doped source region 114, the peak concentration section having a highest dopant concentration is formed in a deeper position than in the n-doped drain region 112.

  Recently Added Patents
Wireless refrigerant scale platform
Treatment of influenza
Lipoprotein analysis by differential charged-particle mobility
Register files for a digital signal processor operating in an interleaved multi-threaded environment
Automatic engine oil life determination with a factor for oil quality
Blended block copolymer composition
Buckle (tube)
  Randomly Featured Patents
Electrical apparatus having status indicating means
Shampoo composition
Cleanout cover system for unloading particulate material from reciprocating floor assemblies
Liquid crystal display having gate driver with multiple regions
Voicing detection modules in a system for automatic transcription of sung or hummed melodies
Selective poly-N-substituted glycine antibiotics
Drum memory controller
Chondrocyte container and method of use
Building construction