Resources Contact Us Home
Semiconductor device

Image Number 11 for United States Patent #8129799.

A field-effect transistor (142) includes a lowly p-doped region 110 formed on a surface of a substrate (102), an n-doped drain region 112 and n-doped source region 114 arranged on a surface of the lowly p-doped region 110, and a device isolation insulating film 132 and device isolation insulating film 134. Here, the device isolation insulating film 132 is formed greater in film thickness than the device isolation insulating film 134; and in the n-doped source region 114, the peak concentration section having a highest dopant concentration is formed in a deeper position than in the n-doped drain region 112.

  Recently Added Patents
Enhancing user experiences using aggregated device usage data
Cartridge for separating analyte from mixture, comprising dispensing and receiving chambers and insert
Stable nanoemulsions for ultrasound-mediated drug delivery and imaging
Cell reselection and handover with multimedia broadcast/multicast service
Partial response decision feedback equalizer with distributed control
Novelty headband
Apparatus for providing location information of hand-held device and method thereof
  Randomly Featured Patents
Polyurethane foam prepared from high concentration-low viscosity polymer-polyol
Golf club face
Arrangement for an axial and radial bearing unit
Fluorescent display device with conductive layer comprising aluminum paste
Large brew basket
Wall panel system
Reactionless gimbal drive system
Display screen with graphical user interface
Method and apparatus for calculating confidence intervals