Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device










Image Number 11 for United States Patent #8129799.

A field-effect transistor (142) includes a lowly p-doped region 110 formed on a surface of a substrate (102), an n-doped drain region 112 and n-doped source region 114 arranged on a surface of the lowly p-doped region 110, and a device isolation insulating film 132 and device isolation insulating film 134. Here, the device isolation insulating film 132 is formed greater in film thickness than the device isolation insulating film 134; and in the n-doped source region 114, the peak concentration section having a highest dopant concentration is formed in a deeper position than in the n-doped drain region 112.








 
 
  Recently Added Patents
Laser protection polymeric materials
Permanent magnet rotor with flux concentrating pole pieces
Self-service administration of a database
Specimen preparation device, and control method in specimen preparation device
Fluid-borne particle detector
Systems and methods for mitigating spectral regrowth from non-linear systems
Transmitting apparatus and retransmitting method
  Randomly Featured Patents
Supplementary box for telephone
Method for pressing paper web and a calender or a press device with a movable shoe element
Separator for magnetic particles from liquid phase
Methanoazuenofurans and methanoazulenone compounds and uses of these compounds as fragrance materials
Squeegee device
Solid state lighting spot
Information processing apparatus, processing method therefor, program allowing computer to execute the method
Integrated apparatus for ethanol production and extraction
Flow control device
IR interferometric apparatus and method for determining the thickness variation of an optical part wherein said optical part defines Newton interference fringe patterns