Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device










Image Number 11 for United States Patent #8129799.

A field-effect transistor (142) includes a lowly p-doped region 110 formed on a surface of a substrate (102), an n-doped drain region 112 and n-doped source region 114 arranged on a surface of the lowly p-doped region 110, and a device isolation insulating film 132 and device isolation insulating film 134. Here, the device isolation insulating film 132 is formed greater in film thickness than the device isolation insulating film 134; and in the n-doped source region 114, the peak concentration section having a highest dopant concentration is formed in a deeper position than in the n-doped drain region 112.








 
 
  Recently Added Patents
Tissue cutting member for a biopsy device
Method for manufacturing light-emitter, organic display panel using light-emitter, organic light-emitting device and organic display device
Modular nucleic acid-based circuits for counters, binary operations, memory and logic
Virtual machine image analysis
Use of TGF-.beta. antagonists to treat infants at risk of developing bronchopulmonary dysplasia
Antenna
Heating device for testing integrated components
  Randomly Featured Patents
Multipurpose connection box for electrical modules
Apparatus for dosing and forming soap foam
Power supply bar comprising a stack of 2 n metal layers separated by 2 n dielectric layers
Stroke typing system
Secure multi-user identity module key exchange
Switch operating rubber member and switch device
Polyurethane binder composition containing a rubber extender oil and a finely divided solid soybean derivative
Fluid cell substance analysis and calibration methods
Circuit arrangement for protecting power semiconductor switches which can be switched on and off against overvoltages
Alarm clock