Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device










Image Number 11 for United States Patent #8129799.

A field-effect transistor (142) includes a lowly p-doped region 110 formed on a surface of a substrate (102), an n-doped drain region 112 and n-doped source region 114 arranged on a surface of the lowly p-doped region 110, and a device isolation insulating film 132 and device isolation insulating film 134. Here, the device isolation insulating film 132 is formed greater in film thickness than the device isolation insulating film 134; and in the n-doped source region 114, the peak concentration section having a highest dopant concentration is formed in a deeper position than in the n-doped drain region 112.








 
 
  Recently Added Patents
Visual processing apparatus and visual processing method
Advanced joint detection in a TD-SCDMA system
Touch sensing technology
Stackable clothes drying apparatus
Systems and methods for excluding undesirable network transactions
Performance apparatus and electronic musical instrument
Tactile output device for computing device notifications
  Randomly Featured Patents
Mirror supporting body at a single lens reflex camera
System and associated terminal, method and computer program product for directional channel browsing of broadcast content
Faucet
Engine, system and method of providing cloud-based business valuation and associated services
Process for the preparation of copolymers
Halostilbene sulfonates useful as starting materials for making fluorescent whitening agents of the 4,4'-distyrylbiphenyl series
High density packet switch with high speed interfaces and method for using same
Bellows switch actuator
Method of patterning a photoresist film using a lithographic
Method of producing erythromycin derivative