Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device










Image Number 11 for United States Patent #8129799.

A field-effect transistor (142) includes a lowly p-doped region 110 formed on a surface of a substrate (102), an n-doped drain region 112 and n-doped source region 114 arranged on a surface of the lowly p-doped region 110, and a device isolation insulating film 132 and device isolation insulating film 134. Here, the device isolation insulating film 132 is formed greater in film thickness than the device isolation insulating film 134; and in the n-doped source region 114, the peak concentration section having a highest dopant concentration is formed in a deeper position than in the n-doped drain region 112.








 
 
  Recently Added Patents
Methods and apparatus for performing multiple photoresist layer development and etching processes
Method and apparatus for optimizing transmission diversity
Method and apparatus for decoding/encoding a video signal with inter-view reference picture list construction
(4938
Adaptive known signal canceller
Wireless enclosure
Method for spore detection
  Randomly Featured Patents
Intraocular lens insertion device
Portable device comprising a communication station configuration and a data carrier configuration
Personal weapon system
Color proof with non-blocking thermal adhesive layer with particulate polymer beads
Upright human floatation apparatus and propulsion mechanism therefor
Apparatus for holding a marking line to a workpiece
Connector arrangement
Carbonator with targeted carbonation level
Modelling apparatus and method
Railroad car tub