Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device










Image Number 11 for United States Patent #8129799.

A field-effect transistor (142) includes a lowly p-doped region 110 formed on a surface of a substrate (102), an n-doped drain region 112 and n-doped source region 114 arranged on a surface of the lowly p-doped region 110, and a device isolation insulating film 132 and device isolation insulating film 134. Here, the device isolation insulating film 132 is formed greater in film thickness than the device isolation insulating film 134; and in the n-doped source region 114, the peak concentration section having a highest dopant concentration is formed in a deeper position than in the n-doped drain region 112.








 
 
  Recently Added Patents
Method for operation of multi-layer-multi-turn high efficiency inductors
Novelty headband
Method and apparatus for detection of the remote origin fraction of radon present in a measuring site
Inhibitors of human immunodeficiency virus replication
Computer system and volume migration control method using the same
Specializing disambiguation of a natural language expression
Segmentation of a product markup image based on color and color differences
  Randomly Featured Patents
Electronic viscometer
Filtration cartridge
Brake point film metering
Modular heat recuperator
Child's play garment
Low-pressure sodium vapor discharge lamp with protective glass layer on electrode lead-throughs
Trencher boot and methods of laying underground cable
Method for determining reliability in electric power system
Control system and memory control method executing a detection of an error in a formation in parallel with reading operation
Multi-layered amorphous metal-based oxygen anodes