Resources Contact Us Home
Semiconductor device

Image Number 11 for United States Patent #8129799.

A field-effect transistor (142) includes a lowly p-doped region 110 formed on a surface of a substrate (102), an n-doped drain region 112 and n-doped source region 114 arranged on a surface of the lowly p-doped region 110, and a device isolation insulating film 132 and device isolation insulating film 134. Here, the device isolation insulating film 132 is formed greater in film thickness than the device isolation insulating film 134; and in the n-doped source region 114, the peak concentration section having a highest dopant concentration is formed in a deeper position than in the n-doped drain region 112.

  Recently Added Patents
Piezoelectric speaker and method of manufacturing the same
Method and apparatus for efficiently inserting fills in an integrated circuit layout
Method and apparatus for transmitting and receiving a signal in a communication system
Phone messaging using audio streams
Lightning-protective explosion-preventive fastener
TPO compositions, articles, and methods of making the same
  Randomly Featured Patents
Glass run having a molded part attached to a doorframe of a vehicle
Sheet feeding apparatus and image forming apparatus having same
Conductive hose and ends
Techniques for transaction semantics for a database server performing file operations
Covering for flower pot and floral grouping
Light-emitting element, light-emitting device, and electronic device
Process for stabilizing aqueous compositions containing tin salts
Method and apparatus for acquiring and establishing a deployable communication system
Multi-dimensional staring lens system
Apparatus for implanting latent insecticide