Resources Contact Us Home
Semiconductor device having a trench type high-power MISFET

Image Number 18 for United States Patent #8129780.

The present invention provides a technique capable of attaining an improvement in current detection accuracy in a trench gate type power MISFET equipped with a current detection circuit. Inactive cells are disposed so as to surround the periphery of a sense cell. That is, the inactive cell is provided between the sense cell and an active cell. All of the sense cell, active cell and inactive cells are respectively formed of a trench gate type power MISFET equipped with a dummy gate electrode. At this time, the depth of each trench extends through a channel forming region and is formed up to the deep inside (the neighborhood of a boundary with a semiconductor substrate) of an n-type epitaxial layer. Further, a p-type semiconductor region is provided at a lower portion of each trench. The p-type semiconductor region is formed so as to contact the semiconductor substrate.

  Recently Added Patents
Polar nematic compounds
Adaptive input interface
Verification of computer-executable code generated from a model
Magnifying glass
Format for providing traffic information and a method and apparatus for using the format
ASICs having programmable bypass of design faults
Engineered enzymes with methionine-gamma-lyase enzymes and pharmacological preparations thereof
  Randomly Featured Patents
Safety garment
Method for teaching spoken English using mouth position characters
Ceramicrete stabilization of U-and Pu-bearing materials
Circumferentially varied quench jet arrangement for gas turbine combustors
Weather monitor
Thermally stable electron gun arrangement with electrically non-conductive spacer members
Systems, methods and devices for correlating reference locations using image data
Cell sample collector probe
Communication method and communication system
Charger unit for an electronic device including a system for protective storage of an adapter plug