Resources Contact Us Home
Semiconductor device having a trench type high-power MISFET

Image Number 18 for United States Patent #8129780.

The present invention provides a technique capable of attaining an improvement in current detection accuracy in a trench gate type power MISFET equipped with a current detection circuit. Inactive cells are disposed so as to surround the periphery of a sense cell. That is, the inactive cell is provided between the sense cell and an active cell. All of the sense cell, active cell and inactive cells are respectively formed of a trench gate type power MISFET equipped with a dummy gate electrode. At this time, the depth of each trench extends through a channel forming region and is formed up to the deep inside (the neighborhood of a boundary with a semiconductor substrate) of an n-type epitaxial layer. Further, a p-type semiconductor region is provided at a lower portion of each trench. The p-type semiconductor region is formed so as to contact the semiconductor substrate.

  Recently Added Patents
Cover opening and closing unit and image forming apparatus including the same
Differentiated PSIP table update interval technology
Link establishment in a wireless communication environment
Novelty snacks and method of manufacture of same
Memory with separate read and write paths
Document-related representative information
Charged-particle beam lens
  Randomly Featured Patents
External rear view mirror for motor vehicles which folds
Semiconductor quantum well laser having a low threshold current density
Ribbed belt for power transmission
Split valve for peel-away sheath
Carburetor electrically-operated automatic choke system
Composite plating having a gradient in density of codeposited particles
Chemical synthesis of a highly potent epothilone
Combined swivel base and pull-out drawer for a telephone or similar article
Brake unit for automotive vehicles
Power converter having independent primary and secondary switches