Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device having a trench type high-power MISFET










Image Number 18 for United States Patent #8129780.

The present invention provides a technique capable of attaining an improvement in current detection accuracy in a trench gate type power MISFET equipped with a current detection circuit. Inactive cells are disposed so as to surround the periphery of a sense cell. That is, the inactive cell is provided between the sense cell and an active cell. All of the sense cell, active cell and inactive cells are respectively formed of a trench gate type power MISFET equipped with a dummy gate electrode. At this time, the depth of each trench extends through a channel forming region and is formed up to the deep inside (the neighborhood of a boundary with a semiconductor substrate) of an n-type epitaxial layer. Further, a p-type semiconductor region is provided at a lower portion of each trench. The p-type semiconductor region is formed so as to contact the semiconductor substrate.








 
 
  Recently Added Patents
(4947
Egg separator
Methods and devices for detecting and measuring environmental conditions in high performance device packages
Electronic flash device
Systems and methods for reducing narrow bandwidth interference contained in broad bandwidth signals
Method and system for filtering noises in an image scanned by charged particles
Tablet computer
  Randomly Featured Patents
Method and apparatus for monitoring channel performance on a channel using alternate mark inversion protocols
Web security via response injection
Mining nozzle with two ring latch
Inherently impedance matched integrated circuit socket
Adaptive fly height for error recovery in a disc drive
Method and system for automatically merging files into a single instance store
Collapsible barbecue grill assembly
Compressor interstage coolant injector nozzle
System and method for completing telephone calls to emergency telephone numbers in highly concentrated access systems
Drill pipe with upset ends having constant wall thickness and method for making same