Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Trench gate type VDMOSFET device with thicker gate insulation layer portion for reducing gate to source capacitance










Image Number 16 for United States Patent #8129779.

A semiconductor device according to the present invention includes a semiconductor layer. A first conductivity type region is formed on a base layer portion of the semiconductor layer. A body region of a second conductivity type is formed on the semiconductor layer to be in contact with the first conductivity type region. A trench in which a gate electrode is embedded through a gate insulating film is formed on the semiconductor layer. The trench penetrates through the body region, so that a deepest portion thereof reaches the first conductivity type region. A source region of the first conductivity type is formed on a surface layer portion of the semiconductor layer around the trench. The gate insulating film includes a thick-film portion having a relatively large thickness on a bottom surface of the trench.








 
 
  Recently Added Patents
Peer-to-peer, internet protocol telephone system with proxy interface for configuration data
Detection system and method for mobile device application
Method and system for establishing enhanced key when terminal moves to enhanced universal terminal radio access network (UTRAN)
High-performance AHCI interface
Semiconductor device
Prevention and reduction of blood loss
Substituted bicyclic HCV inhibitors
  Randomly Featured Patents
Tube and fin circular heat exchanger
Articulating joint for dental or medical lights
Suspended ceiling system
Method and apparatus for analyzing vitamin E in lipoproteins
Compositions and methods of their use in the treatment, prevention and diagnosis of tuberculosis
Actuating drive for positioning a rotary element
Straight needle apparatus for creating a virtual electrode used for the ablation of tissue
Processes of preparing condensed polymers with polycarboxylic acids and polyamines
Rewritable phase-change optical recording composition and rewritable phase-change optical disk
Pasted type lead-acid battery