Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Trench gate type VDMOSFET device with thicker gate insulation layer portion for reducing gate to source capacitance










Image Number 16 for United States Patent #8129779.

A semiconductor device according to the present invention includes a semiconductor layer. A first conductivity type region is formed on a base layer portion of the semiconductor layer. A body region of a second conductivity type is formed on the semiconductor layer to be in contact with the first conductivity type region. A trench in which a gate electrode is embedded through a gate insulating film is formed on the semiconductor layer. The trench penetrates through the body region, so that a deepest portion thereof reaches the first conductivity type region. A source region of the first conductivity type is formed on a surface layer portion of the semiconductor layer around the trench. The gate insulating film includes a thick-film portion having a relatively large thickness on a bottom surface of the trench.








 
 
  Recently Added Patents
Apparatus and method for improved classifier training
Heat-insulating film
Mobile contacts outdialer and method thereof
Device message management system
Methods and apparatus for simulation speedup
Clock mode determination in a memory system
Video recording management
  Randomly Featured Patents
Low bit error rate antenna switch for wireless communications
Non-acidic, high calcium load aqueous fertilizer
Bowler's finger support
Genetic screening methods
Method and apparatus for serverless internet protocol address discovery using source address of broadcast or unicast packet
Method for controlling and/or regulating the cooling stretch of a hot strip rolling mill for rolling metal strip, and corresponding device
FGF21 mutants multimers and uses thereof
Systems and methods using an electrified projectile
Electric brake actuator for vehicles
Electronic system and method for selectively allowing access to a shared memory