Resources Contact Us Home
Trench gate type VDMOSFET device with thicker gate insulation layer portion for reducing gate to source capacitance

Image Number 16 for United States Patent #8129779.

A semiconductor device according to the present invention includes a semiconductor layer. A first conductivity type region is formed on a base layer portion of the semiconductor layer. A body region of a second conductivity type is formed on the semiconductor layer to be in contact with the first conductivity type region. A trench in which a gate electrode is embedded through a gate insulating film is formed on the semiconductor layer. The trench penetrates through the body region, so that a deepest portion thereof reaches the first conductivity type region. A source region of the first conductivity type is formed on a surface layer portion of the semiconductor layer around the trench. The gate insulating film includes a thick-film portion having a relatively large thickness on a bottom surface of the trench.

  Recently Added Patents
Energy storage type of dual-drive coupled power distribution system
Buffered viewing of electronic documents
Distributed vision system with multi-phase synchronization
Rear portion of a vehicle, toy, and/or replicas thereof
Radio frequency coil and apparatus
Lubrication and lubricating oil compositions
Upstream channel bonding using legacy maps in a cable communications system
  Randomly Featured Patents
Chitosan alginate capsules
Methods and apparatus for synchronizing data access to a local memory in a multi-processor system
Pyrogenically prepared, surface modified aluminum oxide
Method and device for band translation
Biaxial compression phase lead connector
Gas turbine engine with improved air cooling circuit
Server cabinet
Ferroelectric-type nonvolatile semiconductor memory
Twisted yarn and twisted bundle of yarns