Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Trench gate type VDMOSFET device with thicker gate insulation layer portion for reducing gate to source capacitance










Image Number 16 for United States Patent #8129779.

A semiconductor device according to the present invention includes a semiconductor layer. A first conductivity type region is formed on a base layer portion of the semiconductor layer. A body region of a second conductivity type is formed on the semiconductor layer to be in contact with the first conductivity type region. A trench in which a gate electrode is embedded through a gate insulating film is formed on the semiconductor layer. The trench penetrates through the body region, so that a deepest portion thereof reaches the first conductivity type region. A source region of the first conductivity type is formed on a surface layer portion of the semiconductor layer around the trench. The gate insulating film includes a thick-film portion having a relatively large thickness on a bottom surface of the trench.








 
 
  Recently Added Patents
Communication apparatus, power supply control method, display apparatus, communication method, and computer program product
Asynchronous task execution
Avalanche photodiodes having accurate and reproductible amplification layer
Lateral double diffused metal oxide semiconductor device and method of manufacturing the same
Protecting information written to recording medium
Antibody recognizing turn structure in amyloid .beta.
Cascode circuit device with improved reverse recovery characteristic
  Randomly Featured Patents
Cleaning agents for contact lenses
Composite backed prestressed mirror for solar facet
Semiconductor memory device and method for controlling the same
Housing for an electronic component
Products and methods for brachytherapy
Electrophotographic photoreceptor, and image forming apparatus and process cartridge using same
Pressure sensitive adhesive composition and sheet
Elimination of overflow of sewer systems
Radio frequency power source for generating an inductively coupled plasma
Patient-to-transducer interface device