Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Trench gate type VDMOSFET device with thicker gate insulation layer portion for reducing gate to source capacitance










Image Number 16 for United States Patent #8129779.

A semiconductor device according to the present invention includes a semiconductor layer. A first conductivity type region is formed on a base layer portion of the semiconductor layer. A body region of a second conductivity type is formed on the semiconductor layer to be in contact with the first conductivity type region. A trench in which a gate electrode is embedded through a gate insulating film is formed on the semiconductor layer. The trench penetrates through the body region, so that a deepest portion thereof reaches the first conductivity type region. A source region of the first conductivity type is formed on a surface layer portion of the semiconductor layer around the trench. The gate insulating film includes a thick-film portion having a relatively large thickness on a bottom surface of the trench.








 
 
  Recently Added Patents
Equipment to facilitate money transfers into bank accounts
Device and method for generating soft tissue contrast images
Fluid-borne particle detector
Base station device and wireless communication method
Wristwatch
Keypad assembly for electronic devices
Cosmetic composition based on a supramolecular polymer and a hyperbranched functional polymer
  Randomly Featured Patents
Inframammary dissector instrument
Power transmitting system for a four-wheel drive vehicle
Nucleic acid molecules encoding cyclotide polypeptides and methods of use
Circuit for driving a matrix display device with a plurality of isolated driving blocks
Bottle
Configurable memory system
Liquid crystal composition and liquid crystal display using the same
Direct digital frequency synthesizer using sigma-delta techniques
Heat-shrinkable tube
Nail polish remover container