Resources Contact Us Home
Trench gate type VDMOSFET device with thicker gate insulation layer portion for reducing gate to source capacitance

Image Number 16 for United States Patent #8129779.

A semiconductor device according to the present invention includes a semiconductor layer. A first conductivity type region is formed on a base layer portion of the semiconductor layer. A body region of a second conductivity type is formed on the semiconductor layer to be in contact with the first conductivity type region. A trench in which a gate electrode is embedded through a gate insulating film is formed on the semiconductor layer. The trench penetrates through the body region, so that a deepest portion thereof reaches the first conductivity type region. A source region of the first conductivity type is formed on a surface layer portion of the semiconductor layer around the trench. The gate insulating film includes a thick-film portion having a relatively large thickness on a bottom surface of the trench.

  Recently Added Patents
Tropoelastin derivatives
Accordion bioreactor
Print control server, print controlling method, and print control program
Position pointer, variable capacitor and inputting apparatus
Method and apparatus for detection of the remote origin fraction of radon present in a measuring site
Developing device
Method of enhancing corrosion resistance of hollow vessels
  Randomly Featured Patents
Acoustic ink mist non-interactive development
Handset cradle and charger
Low center of gravity carrier
Compositions for inhibiting the aggregation pathway of .alpha.-synuclein
Method for the heat-softened severance of glass tubes or plates
Beam separating prism
Food and beverage carrier
Event queuing and consumption
Dithiocarbamate sulfonium salt inhibitor composition