Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Trench gate type VDMOSFET device with thicker gate insulation layer portion for reducing gate to source capacitance










Image Number 16 for United States Patent #8129779.

A semiconductor device according to the present invention includes a semiconductor layer. A first conductivity type region is formed on a base layer portion of the semiconductor layer. A body region of a second conductivity type is formed on the semiconductor layer to be in contact with the first conductivity type region. A trench in which a gate electrode is embedded through a gate insulating film is formed on the semiconductor layer. The trench penetrates through the body region, so that a deepest portion thereof reaches the first conductivity type region. A source region of the first conductivity type is formed on a surface layer portion of the semiconductor layer around the trench. The gate insulating film includes a thick-film portion having a relatively large thickness on a bottom surface of the trench.








 
 
  Recently Added Patents
Morphinan compounds
Support core for cold shrink tube
Method and system for providing an intelligent visual scrollbar position indicator
Method and system for expanding axial coverage in iterative reconstruction in computer tomography (CT)
Detection and use of low molecular-weight modulators of the cold-menthol receptor TRPM8
System and method for content delivery
Camera with monitor
  Randomly Featured Patents
Techniques for bonding substrates using dynamic alternating electric field
Portable urinal holder
Ventilator assembly
Thienopyridine-carboxylic acid derivatives
System and method for message queue management in a power-save network
Athletic knee guard
Photocurable resin composition and method of producing decorative material using the same
Flexible distributed bus priority network
Printer having a fluid capping mechanism
Processing module for programmable processing using computer generated holograms