Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Trench gate type VDMOSFET device with thicker gate insulation layer portion for reducing gate to source capacitance










Image Number 16 for United States Patent #8129779.

A semiconductor device according to the present invention includes a semiconductor layer. A first conductivity type region is formed on a base layer portion of the semiconductor layer. A body region of a second conductivity type is formed on the semiconductor layer to be in contact with the first conductivity type region. A trench in which a gate electrode is embedded through a gate insulating film is formed on the semiconductor layer. The trench penetrates through the body region, so that a deepest portion thereof reaches the first conductivity type region. A source region of the first conductivity type is formed on a surface layer portion of the semiconductor layer around the trench. The gate insulating film includes a thick-film portion having a relatively large thickness on a bottom surface of the trench.








 
 
  Recently Added Patents
Wake-up radio system
Piezoelectric ultrasonic transducer apparatus
Information display
Exposure apparatus, exposure method, and device manufacturing method
Inhibition of HRP-3 using modified oligonucleotides
Computer system and volume migration control method using the same
Apparatus and method for information processing, program, and recording medium
  Randomly Featured Patents
Silica-Base rubber composition intended for the manufacture of highway tires improved resistance to rolling
Amorphous silicon semiconductor and process for same
Directly viewable luminaire
Off peak storage device
Cleaning device
Transport and storage container climate control
Detection system for power equipment
Method and device for describing video contents
Disc brake adjustment device having a blocking device
Process for working up the waste water obtained in the preparation of dinitrotoluene