Resources Contact Us Home Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE     Trench gate type VDMOSFET device with thicker gate insulation layer portion for reducing gate to source capacitance Image Number 16 for United States Patent #8129779. A semiconductor device according to the present invention includes a semiconductor layer. A first conductivity type region is formed on a base layer portion of the semiconductor layer. A body region of a second conductivity type is formed on the semiconductor layer to be in contact with the first conductivity type region. A trench in which a gate electrode is embedded through a gate insulating film is formed on the semiconductor layer. The trench penetrates through the body region, so that a deepest portion thereof reaches the first conductivity type region. A source region of the first conductivity type is formed on a surface layer portion of the semiconductor layer around the trench. The gate insulating film includes a thick-film portion having a relatively large thickness on a bottom surface of the trench.       Recently Added Patents Heated food preparation surface cleaning system Method and apparatus for an intelligent light emitting diode driver having power factor correction capability Flavonoid-3',5'-hydroxylase gene of commelina communis URL filtering based on user browser history Spectral CT Backboard container storage system Examining apparatus   Randomly Featured Patents Centerline web guide apparatus Modular welding apparatus Collapsible elevating board for bed mattresses Cable railway system Cross-connector of plastic material for a window grill construction 12/42 volt DC brush motor control system Proportioned surgically implantable knee prosthesis Gas detecting method and system Methods of therapeutic monitoring of nitrogen scavenging Luggage wheel © 2006-2008 PatentGenius. All Rights Reserved.