Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Vertical outgassing channels










Image Number 19 for United States Patent #8129257.

InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H.sub.2O and other molecules near the bonding surface migrate to the closest VOC and are quenched in the buried oxide (BOX) layer quickly by combining with bridging oxygen ions and forming pairs of stable nonbridging hydroxyl groups (Si--OH). Various sizes and spacings of channels are envisioned for various devices.








 
 
  Recently Added Patents
Faceplate with dust-proof shutter
Emergency communications system
Automated trading system
Method for forming a microstructure
Image processing apparatus, method for displaying interface screen, and computer-readable storage medium for computer program
Unified LTE cloud system
Encoding method, encoding apparatus, decoding method, decoding apparatus, and system
  Randomly Featured Patents
Motorized micro-bike
Article carrier
Producing method of a thermoplastic resin sheet and producing apparatus therefor
Method and device for complex permittivity measurements as a function of frequency
Vehicle speed control apparatus
Nickel based alloy layer for perpendicular recording media
Method and apparatus for heating glass sheets with recirculated gas
Thermally stable perpendicular magnetic recording medium
Internet telephone system, access point apparatus, and communication system using access point apparatus and broad-range data communication network
Sequential operation differential current amplifier