Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Vertical outgassing channels










Image Number 19 for United States Patent #8129257.

InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H.sub.2O and other molecules near the bonding surface migrate to the closest VOC and are quenched in the buried oxide (BOX) layer quickly by combining with bridging oxygen ions and forming pairs of stable nonbridging hydroxyl groups (Si--OH). Various sizes and spacings of channels are envisioned for various devices.








 
 
  Recently Added Patents
Method for resource allocation in a wireless communication network, method for error-free transmission of information, node and wireless communication network
.beta.-2 microglobulin as a biomarker for peripheral artery disease
Device and method for controlling brightness of organic light emitting diode display
Toy
Method, apparatus and computer program product for visualizing whole streets based on imagery generated from panoramic street views
Frame syncrhonization in orthogonal frequency-division multiplexing systems
High throughput thin film characterization and defect detection
  Randomly Featured Patents
Digital asset usage accountability via event journaling
Tightening apparatus
Dry emollient compositions
Toner
Method for producing an DMC catalyst
Cruise control system and vehicle loaded with the same
Wire-wound leadscrew assembly with a preloaded leadscrew wire nut, and its fabrication
Polyurethane elastomers having prolonged flex life and tires made therefrom
Power safety barrier for wheelchair lift
Chair