Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Vertical outgassing channels










Image Number 19 for United States Patent #8129257.

InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H.sub.2O and other molecules near the bonding surface migrate to the closest VOC and are quenched in the buried oxide (BOX) layer quickly by combining with bridging oxygen ions and forming pairs of stable nonbridging hydroxyl groups (Si--OH). Various sizes and spacings of channels are envisioned for various devices.








 
 
  Recently Added Patents
Luminescent substrate for liciferase
Toy
Newly identified human rhinovirus of HRV-C and methods and kits for detecting HRV-Cs
Determination of copy number variations using binomial probability calculations
Proximity search methods using tiles to represent geographical zones
Formwork release composition and use thereof
Method and system for determining an optimal missile intercept approach direction for correct remote sensor-to-seeker handover
  Randomly Featured Patents
Imaging device
Methods for handling masa
Novel reinforcing additive and method of reinforcing thermoplastic polymer therewith
Eating receptacle frame that incorporates a plate and cup assembly
Ink set, ink cartridge, inkjet recording method, and recorded matter
Gas chromatography with ambient pressure stability control
Foldable stand with rotatable legs for camera or microphone
Bullet trap
Elevate spatula
Portable electronic telecommunication device having capabilities for the hearing-impaired