Resources Contact Us Home
Vertical outgassing channels

Image Number 19 for United States Patent #8129257.

InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H.sub.2O and other molecules near the bonding surface migrate to the closest VOC and are quenched in the buried oxide (BOX) layer quickly by combining with bridging oxygen ions and forming pairs of stable nonbridging hydroxyl groups (Si--OH). Various sizes and spacings of channels are envisioned for various devices.

  Recently Added Patents
Wireless updating of hearing devices
Vapor phase decarbonylation process
System and method to assess serviceability of device
LED lighting module
Volume compensation within a photovoltaic device
Virtual physician acute myocardial infarction detection system and method
  Randomly Featured Patents
Reduced-step CMOS processes for low-cost radio frequency identification devices
Internal reduced-voltage generator for semiconductor integrated circuit
System for continuously generating polychromatic light by means of doped microstructured optical fibre
Positive variable speed transmission system
Method for remote measurement of anomalous complex variations of a predetermined electrical parameter in a target zone
Speed variation pulley
Semiconductor device
Systems and methods that evaluate distance to potential hazards utilizing overlapping sensing zones
Direct vision sensor for 3D computer vision, digital imaging, and digital video