Resources Contact Us Home
Vertical outgassing channels

Image Number 19 for United States Patent #8129257.

InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H.sub.2O and other molecules near the bonding surface migrate to the closest VOC and are quenched in the buried oxide (BOX) layer quickly by combining with bridging oxygen ions and forming pairs of stable nonbridging hydroxyl groups (Si--OH). Various sizes and spacings of channels are envisioned for various devices.

  Recently Added Patents
Account and customer creation in an on-line banking model
Liquid crystal display panel
Audio signal clip detection
Managing wear leveling and garbage collection operations in a solid-state memory using linked lists
Handling errors in a data processing system
Method and apparatus for connecting signal lines of multiple layers to certain contacts while preventing connections with other contacts
Method and apparatus for reducing cost of optical amplification in a network
  Randomly Featured Patents
Switching mechanism and a recording apparatus using said switching mechanism
Cable loss simulator for serial digital source using a passive network
Photosensitive composition
Grab sampler
High performance logic and high density embedded dram with borderless contact and antispacer
Method and apparatus for determining whether an intubated patient has been properly intubated
Correction tape dispenser
Method of setting and dyeing yarn
Dense pitch bulk FinFET process by selective EPI and etch
Detection of drastic blood pressure changes