Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Vertical outgassing channels










Image Number 13 for United States Patent #8129257.

InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H.sub.2O and other molecules near the bonding surface migrate to the closest VOC and are quenched in the buried oxide (BOX) layer quickly by combining with bridging oxygen ions and forming pairs of stable nonbridging hydroxyl groups (Si--OH). Various sizes and spacings of channels are envisioned for various devices.








 
 
  Recently Added Patents
System and method for combined I/Q generation and selective phase interpolation
Imidazolidine-2,4-dione derivatives, and use thereof as a cancer drug
Isolated nucleic acid molecule encoding an antibody that reduces GDF-8 activity
Paper product with surface pattern
Fuse part in semiconductor device and method for forming the same
Cable exit trough with insert
Systems, devices, methods, and compositions including fluidized x-ray shielding compositions
  Randomly Featured Patents
Dolly for holding and tilting a bucket
Surgical access system and related methods
Catalyst and process for converting synthesis gas to liquid motor fuels
Solar energy collector and storage device
Process for making a solid optical limiter containing a graded distribution of reverse saturable material
Wiring design method and system for electronic wiring boards
Drink container with integral straw
Economic opportunity pursuit management and presentation generation
ARA type protograph codes
Pearlescent glass pigment