Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Vertical outgassing channels










Image Number 13 for United States Patent #8129257.

InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H.sub.2O and other molecules near the bonding surface migrate to the closest VOC and are quenched in the buried oxide (BOX) layer quickly by combining with bridging oxygen ions and forming pairs of stable nonbridging hydroxyl groups (Si--OH). Various sizes and spacings of channels are envisioned for various devices.








 
 
  Recently Added Patents
Fluid-borne particle detector
Polynucleotide capture materials, and methods of using same
Pharmaceutical compositions of paclitaxel, paclitaxel analogs or paclitaxel conjugates and related methods of preparation and use
Multicyclic compounds and methods of use thereof
Feedback method and processing system for policy installation failures
Method of synchronization for low power idle
Operation controlling apparatus
  Randomly Featured Patents
Reduced pressure drying apparatus and reduced pressure drying method
Method and apparatus of scanning control for information processing systems
Implementing two dimensional segment inversions with inversion-conforming data sets processing being rendered to include generalized composite weight factors in the processing of error-affecte
Pressure transducer
Switchgear
Motor vehicle with windscreen, separate roof screen and pull-out roller blind
Plastic pipe to metal pipe fitting
Biological and ballasetd flocculation treatment of wastewater
Light-emitting diode
Secure communications within and between personal area networks by using private and public identifiers