Resources Contact Us Home
Vertical outgassing channels

Image Number 13 for United States Patent #8129257.

InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H.sub.2O and other molecules near the bonding surface migrate to the closest VOC and are quenched in the buried oxide (BOX) layer quickly by combining with bridging oxygen ions and forming pairs of stable nonbridging hydroxyl groups (Si--OH). Various sizes and spacings of channels are envisioned for various devices.

  Recently Added Patents
Predicting popularity of electronic publications
Image processing system, image processing method and program for image processing
Lightweight multicast method and apparatus for data distribution service
Porous polymeric resins
Adhering composition and method of applying the same
Methods and apparatus for achieving multiple bit rates in passive optical networks
Fan guide
  Randomly Featured Patents
Ultrasonic probe, ultrasonic testing equipment, ultrasonic testing method, and manufacturing method of seamless pipe or tube
Method and apparatus for determining engine oil change intervals according to actual engine use
VCP-based vectors for algal cell transformation
Methods for partitioning advanced glycosylation endproducts
Process for producing phenothiazine granules
Meter reading system
Turbine type air motor
Motor vehicle seat assembly
High affinity nucleic acid ligands containing modified nucleotides
miR 204, miR 211, their anti-miRs, and therapeutic uses of same