Resources Contact Us Home
Vertical outgassing channels

Image Number 13 for United States Patent #8129257.

InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H.sub.2O and other molecules near the bonding surface migrate to the closest VOC and are quenched in the buried oxide (BOX) layer quickly by combining with bridging oxygen ions and forming pairs of stable nonbridging hydroxyl groups (Si--OH). Various sizes and spacings of channels are envisioned for various devices.

  Recently Added Patents
Method of forming a power supply controller and structure therefor
Power supply system for a data storage system and a method of controlling a power supply
Positioning vehicles to improve quality of observations at intersections
Personal warming apparatus
Resuming piecewise calibration of a real-time-clock unit after a measured offset that begins at the next calibration period
Diazeniumdiolated phosphorylcholine polymers for nitric oxide release
Using sets of OTDR receive fibers with different lengths of marker events to verify optical fiber connectivity
  Randomly Featured Patents
Schmitt circuit with MIS field effect transistors
Disconnecting handle with auxiliary contacts for use with CDM
Vehicle transmission arrangement
Method and device for controlling an internal combustion engine
Package wrapping apparatus and method
System and method for use in displaying images of a body part
Cutting device
Method for driving an ink jet recording head having improved discharge stability and recording apparatus having the same
Optical pick-up apparatus