Resources Contact Us Home
Vertical outgassing channels

Image Number 13 for United States Patent #8129257.

InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H.sub.2O and other molecules near the bonding surface migrate to the closest VOC and are quenched in the buried oxide (BOX) layer quickly by combining with bridging oxygen ions and forming pairs of stable nonbridging hydroxyl groups (Si--OH). Various sizes and spacings of channels are envisioned for various devices.

  Recently Added Patents
Image processing system, image processing method and program for image processing
System and method for judging success or failure of work of robot
Disk array apparatus and firmware update method therefor
Near-field transducers for focusing light
Patient interface
Access control method, information display device using the same, and information display system
Color image forming apparatus with contact control of process units
  Randomly Featured Patents
Plastic jacket for a cementless artificial joint stem and artificial joint having the jacket
High voltage A.C. test set for measuring true leakage current
Automatic detection of full or half duplex capability in a remote network device
Print media loading mechanism having displaceable endless belts
Chimeric receptor molecules for delivery of co-stimulatory signals
Projection electronic microscope for reducing geometric aberration and space charge effect
Photosensitive diode array storage target
Portion of a display screen with an icon
High efficiency deep fat fryer
Portion of a fabric conditioning article