Resources Contact Us Home
Vertical outgassing channels

Image Number 13 for United States Patent #8129257.

InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H.sub.2O and other molecules near the bonding surface migrate to the closest VOC and are quenched in the buried oxide (BOX) layer quickly by combining with bridging oxygen ions and forming pairs of stable nonbridging hydroxyl groups (Si--OH). Various sizes and spacings of channels are envisioned for various devices.

  Recently Added Patents
Semiconductor device
Protein purification
Simulating non power of two texture behavior
Call admission control method and system
Philanthropy management apparatus, system, and methods of use and doing business
Inter vehicle communication system
Portion of display panel or screen with an icon
  Randomly Featured Patents
Compounds for producing 2-naphthamide derivative
V-type engine
Dedicated digital-to-analog network audio bridging system
Pressure regulator
Providing a presentation on a network having a plurality of synchronized media types
Azalea plant named `MNIHAR013`
Dual chamber package for pressurized products
Play control method in digital versatile disc player
Hydraulic suspension control device
Decorative candleholder