Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Omega shaped nanowire field effect transistors










Image Number 10 for United States Patent #8129247.

A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire on a semiconductor substrate, forming a first gate structure on a first portion of the nanowire, forming a first protective spacer adjacent to sidewalls of the first gate structure and over portions of the nanowire extending from the first gate structure, removing exposed portions of the nanowire left unprotected by the first spacer, and epitaxially growing a doped semiconductor material on exposed cross sections of the nanowire to form a first source region and a first drain region.








 
 
  Recently Added Patents
Blend polymer gas separation membrane
Photoelectric conversion device
Puncture resistant fabric
Separate matching models based on type of phone associated with a caller
Management of memory array with magnetic random access memory (MRAM)
Isoselective polymerization of epoxides
Methods and systems for distributing broadcast messages on various networks
  Randomly Featured Patents
Liquid crystal display
Spring-loaded installation for electronic register module
Apparatus to flow control frames in a networked storage virtualization using multiple streaming protocols
Transdermal drug delivery system
Antenna coil to be mounted on a circuit board and antenna device
Diskdrive suspending device for a computer
Process for the preparation of polybutene-1
Fuel cell
Apparatus for modulation and demodulating digital data
Printing apparatus with toner projection means