Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Omega shaped nanowire field effect transistors










Image Number 10 for United States Patent #8129247.

A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire on a semiconductor substrate, forming a first gate structure on a first portion of the nanowire, forming a first protective spacer adjacent to sidewalls of the first gate structure and over portions of the nanowire extending from the first gate structure, removing exposed portions of the nanowire left unprotected by the first spacer, and epitaxially growing a doped semiconductor material on exposed cross sections of the nanowire to form a first source region and a first drain region.








 
 
  Recently Added Patents
Kinase and ubiquination assays
Manually operable clipping-machine
Desensitized filters
Membrane-supported catalysts and the process of oxidative dehydrogenation of ethane using the same
Displaying clinical predicted length of stay of patients for workload balancing in a healthcare environment
Systems and methods for hernia repair
Method and apparatus for interactively monitoring a physiological condition and for interactively providing health-related information
  Randomly Featured Patents
Portion of retaining block
Method and apparatus for regulating mold clamping force in an injection molding machine
Tractor cab
Vehicle tire
Diaphragm pumps driven by pulse pistons
System for selecting a computer solution from a pre-defined set
Method and apparatus for measuring sample reaction results on biosensor
Method of controlling a combustion flame
Method and apparatus for implementing Q&A function and computer-aided authoring
Cop sorting and transporting system