Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Omega shaped nanowire field effect transistors










Image Number 10 for United States Patent #8129247.

A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire on a semiconductor substrate, forming a first gate structure on a first portion of the nanowire, forming a first protective spacer adjacent to sidewalls of the first gate structure and over portions of the nanowire extending from the first gate structure, removing exposed portions of the nanowire left unprotected by the first spacer, and epitaxially growing a doped semiconductor material on exposed cross sections of the nanowire to form a first source region and a first drain region.








 
 
  Recently Added Patents
Strongly bound carbon nanotube arrays directly grown on substrates and methods for production thereof
Rotating device
Haloalky -substituted amides as insecticides and acaricides
Phase locking loop
Wire guide
Stable nanoemulsions for ultrasound-mediated drug delivery and imaging
Compositions and methods using microspheres and non-ionic contrast agents
  Randomly Featured Patents
Method and machine for converting heat to power
Epoxy functional organosilicon polymer
Electrophotographic element containing a polymeric multi-phase interlayer
Active impedance compensation
Electrical connector network
Pool step
Lens cap set and a lens device utilizing the same
Scissors
Flue gas desulfurization
Methods, devices and systems for programming neurostimulation