Resources Contact Us Home
Omega shaped nanowire field effect transistors

Image Number 10 for United States Patent #8129247.

A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire on a semiconductor substrate, forming a first gate structure on a first portion of the nanowire, forming a first protective spacer adjacent to sidewalls of the first gate structure and over portions of the nanowire extending from the first gate structure, removing exposed portions of the nanowire left unprotected by the first spacer, and epitaxially growing a doped semiconductor material on exposed cross sections of the nanowire to form a first source region and a first drain region.

  Recently Added Patents
Separate matching models based on type of phone associated with a caller
Communication device
Display systems with touch screens
Antibodies to Clostridium difficile toxins
Use of Lactobacillus for liver protection
Block copolymer nanoparticle compositions
Washing-up bowl
  Randomly Featured Patents
Auto-boresight technique for self-aligning phase conjugate laser
Jun kinase inhibitors
Cooling system for a post-mix beverage dispenser
Ion source generator auxiliary device for phosphorus and arsenic beams
Method of treating organic waste water
Image recording apparatus
Broadcast receiving apparatus and display control method
Catheter apparatus and method for creating a vascular bypass in-vivo
Power factor correction circuit for AC to DC power supply
Method of cleaning laser ablation debris