Resources Contact Us Home
Omega shaped nanowire field effect transistors

Image Number 10 for United States Patent #8129247.

A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire on a semiconductor substrate, forming a first gate structure on a first portion of the nanowire, forming a first protective spacer adjacent to sidewalls of the first gate structure and over portions of the nanowire extending from the first gate structure, removing exposed portions of the nanowire left unprotected by the first spacer, and epitaxially growing a doped semiconductor material on exposed cross sections of the nanowire to form a first source region and a first drain region.

  Recently Added Patents
Content display monitor
Methods and devices for creating, compressing and searching binary tree
Solar cell using polymer-dispersed liquid crystals
Method and composition for improving skin barrier function
Look up table (LUT) structure supporting exclusive OR (XOR) circuitry configured to allow for generation of a result using quaternary adders
Method for producing a sulfonated polyarylether block copolymer
Cell reselection and handover with multimedia broadcast/multicast service
  Randomly Featured Patents
Heterojunction field effect transistor with monolayers in channel region
Radio set handle
Methods for improving the gas barrier properties of polymeric containers
Structure and method for forming a capacitively coupled chip-to-chip signaling interface
Light apparatus for animal pets
Method and apparatus for multiuser access in a multicarrier modulation network
Process for the preparation of branched low-pressure polyethylene, new low-pressure polyethylenes, and preformed bifunctional catalysts
Solar panel with storage
Method and apparatus for establishing a trusted and secure relationship between two parties connected to a network
Vessel for storing cryogenic liquids