Resources Contact Us Home
Manufacturing method of microstructure

Image Number 13 for United States Patent #8129210.

A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from C. to C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate.

  Recently Added Patents
Communication system and time synchronization method
Integrated circuit packaging system with laser hole and method of manufacture thereof
Center spreader adapter tool for toilet paper rolls and paper towel rolls that do not have inner cardboard tubes
Difference detecting apparatus, difference output apparatus, and medium
Cell proliferation inhibitor
Activated carbon cryogels and related methods
Image correction method
  Randomly Featured Patents
Method to achieve fast active scan in 802.11 WLAN
Door latch assembly
Electromagnetic water treating device
Side chair
Broadband wavelength multiplexing and demultiplexing filter and optical splitter with optical signal multiplexing and demultiplexing function
Car wash conveyor
Multi-phase osteochondral implantable device
Cooking apparatus
Carrier with embedded component and method for fabricating the same
Phase adjustor for semiconductor integrated circuit