Resources Contact Us Home
Manufacturing method of microstructure

Image Number 13 for United States Patent #8129210.

A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from C. to C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate.

  Recently Added Patents
Recombinant negative strand virus RNA expression systems and vaccines
System for presenting media services
Micromachined devices and fabricating the same
Battery pouch sheet edge insulation
Playback device, playback method, and computer program
Decontamination apparatus and method
Inspection tool for top guides of a boiling water reactor
  Randomly Featured Patents
Interval timing apparatus for athletic events
2'-OMe C.sup.AC phosphoramidite and methods for preparation and use thereof
Binary switching video amplifier
Trusted agents for open distribution of electronic money
Method for continuously producing sanitary articles and sanitary article produced
Method for acoustically measuring wall thickness of tubular goods
Illuminated animal collar and leash
Pitch control composition
Process for production of hydantoin derivatives
Optically active hydroxyiodolactone