Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Manufacturing method of microstructure










Image Number 13 for United States Patent #8129210.

A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from 850.degree. C. to 950.degree. C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate.








 
 
  Recently Added Patents
System and method for detecting crop rows in an agricultural field
Electronic device with embedded antenna
System for and method of remotely auditing inventoried assets
Reproducible dither-noise injection
Photographic printing paper and method of making same
Noise spectrum tracking in noisy acoustical signals
Managing job execution
  Randomly Featured Patents
Methods, systems, and/or apparatuses for use in searching for information using computer platforms
Volume holographic diffusers
Water-dispersible polyisocyanate preparations for producing repulpable paper
Motion adaptive frequency folding circuit
N-alkynyl-2-(substituted phenoxy) alkylamides and their use as fungicides
Medical valve and method of use
Image communication apparatus
Spark plug manufacturing method
Method for determining formaldehyde present in air
Semiconductor integrated circuit device used in data line driver of plane type display apparatus