Resources Contact Us Home
Manufacturing method of microstructure

Image Number 13 for United States Patent #8129210.

A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from C. to C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate.

  Recently Added Patents
Foodservice equipment
Load driving device, vehicle equipped with load driving device, and method of controlling load driving device
Methods and systems for use of photolyzable nitric oxide donors
Method of detecting early immune activation
Method for fabricating semiconductor device with side contact
Mobility in a multi-access communication network
Mobile terminal and method for controlling operation of the same
  Randomly Featured Patents
Method of aging field emission devices
Low pressure mercury vapor discharge lamp and preparation thereof
Rematable optical splice utilizing rods with resilient coating
Jewelry box
Method and system for selecting transmission modes for streaming media content to a wireless handset access technology
Treatment couch
Functionality index (FI) for use with an engineering management system (EMS)
Sensing rod for the manual scanning of graphic information
Organic EL display device and manufacturing method thereof
Air-free pouch packaging method