Resources Contact Us Home
Manufacturing method of microstructure

Image Number 13 for United States Patent #8129210.

A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from C. to C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate.

  Recently Added Patents
Systems and methods for detailed error reporting in data storage systems
Method, apparatus, and system for synchronizing contents
Selecting modulation and coding scheme in the presence of interference
Satellite mounting pole
Display screen or portion thereof with graphical user interface
Laser protection polymeric materials
Light emitting device
  Randomly Featured Patents
Control signal apparatus for CATV system
Method for mounting a tag in a tire sidewall
Color sequential illumination system
Occupant detection system
Control system for a motor having a shunt field winding
Equipment for storing and advancing an elastic member for pulling a cable into a cable protecting pipe
Note pad
Variable scale rotary switch
Apparatus and method for converting an analog audio signal into digital data
Node self-configuration and operation in a wireless network