Resources Contact Us Home
Manufacturing method of microstructure

Image Number 13 for United States Patent #8129210.

A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from C. to C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate.

  Recently Added Patents
Asynchronous task execution
High electron mobility transistor and manufacturing method thereof
Semiconductor device and manufacturing method thereof
Inhibitor of casein kinase 1delta and casein kinase 1E
Method and apparatus for controlling power supply
Methods for integrating the production of cellulose nanofibrils with the production of cellulose nanocrystals
Switching apparatus and controlling method thereof
  Randomly Featured Patents
Ultrasonic inspection apparatus and method for locating multiple defects in eccentric wall tubular goods
Thiadiazole amide MMP inhibitors
Power supply fault protection circuit
Transparent impact-resistant molded articles
Creation and migration of distributed streams in clusters of networked computers
Estimating and limiting inter-cell interference
Fire barrier
Ready to bake dough with shaped, coextruded filling and method of making same
Apparatus and system for insertion of an implant
3D interconnect with protruding contacts