Resources Contact Us Home
Double patterning process

Image Number 8 for United States Patent #8129099.

Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.

  Recently Added Patents
Polypeptides and immunizing compositions containing gram positive polypeptides and methods of use
System and method for optimizing use of plug-in air conditioners and portable heaters
Hepodxilin analog enantiomers
Data portal for concurrent assessment
Extensible framework for client-based active network measurement
Method of transmitting and receiving a paging message in a mobile communication system
  Randomly Featured Patents
Magazine for a small arm
Accessible VCR jack assembly
Interlocking barrier system with multiple securing mechanisms
Circuit for evaluating thermocouple measurement signals
Electronic open light sign housing
Fastener with relieved thread section ends
Patch array feed for an automotive radar antenna
Pipe joint
Electrooptical device
Device for measuring backscattered radiation using a frequency selective element