Resources Contact Us Home
Double patterning process

Image Number 4 for United States Patent #8129099.

Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.

  Recently Added Patents
Hair motion compositor system for use in a hair/fur pipeline
Method and apparatus for establishing a media clip
Method of fabricating crystal unit, crystal unit fabrication mask, and crystal unit package
Termite tubing preventative for non-wood materials
Plants and seeds of hybrid corn variety CH089600
Image forming apparatus capable of timely starting different image formation mode
Liquid crystal display device
  Randomly Featured Patents
Electrical pipe fitting with integral grounding fixture
Balloon catheter
Single-electron memory device using an electron-hole coulomb blockade
Membrane air dryer and sweep valve
Expandable multi-ply obliquely oriented honeycomb filter media
Scanning and exposing method using a plurality of optical beams and apparatus therefor
Liquid crystalline epoxy monomer and liquid crystalline epoxy resin containing mesogen twins
Shelf support system for split cantilever shelves
Refrigerating machine oil
Detachable rolling-element retainer