Resources Contact Us Home
Double patterning process

Image Number 4 for United States Patent #8129099.

Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.

  Recently Added Patents
Software self-checking systems and methods
Droplet generation and detection device, and droplet control device
Method for mapping resource units
Contact detection between a disk and magnetic head
Formulations, their use as or for producing dishwashing detergents and their production
Semiconductor memory system having ECC circuit and controlling method thereof
Ice tray for refrigerator
  Randomly Featured Patents
Protective device for a longitudinally extending machine component
Magnetic field generator in which an end face of a magnetic material member projects from man end face of magnetic field generating cores
Sound reproducing array processor system
3D object creation system comprising a plurality of layer groups
Golf balls cover compositions
Closed-loop waste disposal system for enhanced safety
Local mobile number for a foreign resident mobile
Apparatus for a vertically accumulable semiconductor device with external leads secured by a positioning mechanism
Macrocyclic chelating agents and chelates thereof
Folding shelf