Resources Contact Us Home
Double patterning process

Image Number 4 for United States Patent #8129099.

Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.

  Recently Added Patents
Image sensor with improved color crosstalk
Snapshot isolation support for distributed query processing in a shared disk database cluster
Pharmaceutical treatment process using chitosan or derivative thereof
Low drop-out regulator providing constant current and maximum voltage limit
Dual protocol input device
Display for gloves
  Randomly Featured Patents
Method of making an end connection to a fluid power cylinder and product
Automatic brightness control circuit for a high voltage electrical power supply
Aminopyrazole kinase inhibitors
Synthetic polymer films and fibers rendered permanently anti-static
Muffler with stamped internal plates defining tubes and separating chambers
Method for producing and magazining micro-components
Arrangement in a needle holder for a self-destructing syringe
Methods of and apparatus for winning reef
Digital media player dock with alarm clock
Rapidly deployable emergency communication system