Resources Contact Us Home
Method for manufacturing a semiconductor device

Image Number 5 for United States Patent #8129094.

A spacer is formed on side and top portions of a photoresist pattern after a mask process is performed so that the spacer may be used as an etching mask. The spacer is formed using a polymer deposition layer which is a low temperature oxide or nitride that can be deposited on side and top portions of the photoresist pattern at C. after the mask process is performed. A method for manufacturing a semiconductor device includes forming a bottom anti-reflection coating film on an etch-target layer, patterning a photoresist layer formed on the bottom anti-reflection coating film, forming an insulation layer on a patterned photoresist layer and the bottom anti-reflection coating film, etching back the insulation layer to form a spacer on sidewalls of the patterned photoresist layer, and etching the bottom anti-reflection coating film and the etching target layer exposed by the spacer to form a fine pattern.

  Recently Added Patents
Mounting structure, electro-optical apparatus, and touch panel
Semiconductor device
Nestable shallow container
Autonomous primary-mirror synchronized reset
Wavelength and power scalable waveguiding-based infrared laser system
Electromagnetic bandgap structure and printed circuit board
Systems and methods for authorizing, authenticating and accounting users having transparent computer access to a network using a gateway device
  Randomly Featured Patents
Fragrance dispensers
Program and method calculating resistance of a conductor in consideration of a skin effect
Device and method for simulating bilirubin in urine
Combined ceiling fan motor housing and light kit
Method and apparatus for positioning spark plug electrodes
Ink jet recording element
Small computer systems interface--data link processor
Apparatus for internal chucking of soft three-jaw chucks on lathes
Sheet material dispensing device
Micro-reactor for reactions between gases and liquids