Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for manufacturing a semiconductor device










Image Number 5 for United States Patent #8129094.

A spacer is formed on side and top portions of a photoresist pattern after a mask process is performed so that the spacer may be used as an etching mask. The spacer is formed using a polymer deposition layer which is a low temperature oxide or nitride that can be deposited on side and top portions of the photoresist pattern at 75.about.220.degree. C. after the mask process is performed. A method for manufacturing a semiconductor device includes forming a bottom anti-reflection coating film on an etch-target layer, patterning a photoresist layer formed on the bottom anti-reflection coating film, forming an insulation layer on a patterned photoresist layer and the bottom anti-reflection coating film, etching back the insulation layer to form a spacer on sidewalls of the patterned photoresist layer, and etching the bottom anti-reflection coating film and the etching target layer exposed by the spacer to form a fine pattern.








 
 
  Recently Added Patents
System and method for efficient association of a power outlet and device
Mobile terminal apparatus, radio base station apparatus and radio communication method
Method and system for tracking mobile electronic devices while conserving cellular network resources
Polishing composition
Portable device for treating insect bites and the like
Interactive program guide systems and processes
Platform for generating electricity from flowing fluid using generally prolate turbine
  Randomly Featured Patents
Backed building structure panel having grooved and ribbed surface
Cup holder
Apparatus and method for making gun targets
Ball-point pen
Multi-speed transmission
Method for manufacturing a low alloy steel excellent in corrosion resistance
Spin-blast tool
Machine tool
Platen unit and liquid ejecting apparatus
Monocyclopentadienyl transition metal olefin polymerization catalysts