Resources Contact Us Home
Fabrication of SOI with gettering layer

Image Number 2 for United States Patent #8128749.

An SOI substrate has a gettering layer of silicon-germanium (SiGe) with 5-10% Ge, and a thickness of approximately 50-1000 nm. Carbon (C) may be added to SiGe to stabilize the dislocation network. The SOI substrate may be a SIMOX SOI substrate, or a bonded SOI substrate, or a seeded SOI substrate. The gettering layer may disposed under a buried oxide (BOX) layer. The gettering layer may be disposed on a backside of the substrate.

  Recently Added Patents
Lead frame array package with flip chip die attach
Delta-sigma AD converter circuit and battery pack
Spreading technique applied to broadband mobile communications by satelite relying on DVB-RCS
System and method for self service marketing research
Transport of multiple asynchronous data streams using higher order modulation
Systems and methods for reducing narrow bandwidth interference contained in broad bandwidth signals
Measuring apparatus for measuring a physical property of a sample
  Randomly Featured Patents
Omnidirectional antenna utilizing an asymmetrical bicone as a passive feed for a radiating element
Solar collector
Multi-branch frequency-hopping receiver
Semantically-aware, dynamic, window-based disc scheduling method and apparatus for better fulfilling application requirements
Control of home network devices
Refrigerator and condenser
Articulated vertebral body spacer
Preparation of soy-extended frankfurters and other cured meat products having improved color
Battery holding structure for two-wheeled vehicle
Polarizing and locking means for mateable units such as electrical connectors