Resources Contact Us Home
Fabrication of SOI with gettering layer

Image Number 2 for United States Patent #8128749.

An SOI substrate has a gettering layer of silicon-germanium (SiGe) with 5-10% Ge, and a thickness of approximately 50-1000 nm. Carbon (C) may be added to SiGe to stabilize the dislocation network. The SOI substrate may be a SIMOX SOI substrate, or a bonded SOI substrate, or a seeded SOI substrate. The gettering layer may disposed under a buried oxide (BOX) layer. The gettering layer may be disposed on a backside of the substrate.

  Recently Added Patents
System and method for producing statistically valid assay means and ranges for quality control materials
Information display
Circuit board and display panel assembly having the same
Method and system for simulating wireless networks
Pharmaceutical composition comprising gabapentin or an analogue thereof and an .alpha.-aminoamide and its analgesic use
Focus information generating device and focus information generating method
Tiger paw stationary tab
  Randomly Featured Patents
Endless chain conveyor link
Pool table
Polyglycidyl compounds
Rear window with an alarm lamp for a vehicle
Vehicle battery holder
Printable polypropylene film having anti-fog properties
Reprography process: color-copying with sublimable dyes
Image processing apparatus using alpha plane and method thereof
Method of managing the valves of a simulated moving bed separation system
Drinking vessel tray