Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Fabrication of SOI with gettering layer










Image Number 2 for United States Patent #8128749.

An SOI substrate has a gettering layer of silicon-germanium (SiGe) with 5-10% Ge, and a thickness of approximately 50-1000 nm. Carbon (C) may be added to SiGe to stabilize the dislocation network. The SOI substrate may be a SIMOX SOI substrate, or a bonded SOI substrate, or a seeded SOI substrate. The gettering layer may disposed under a buried oxide (BOX) layer. The gettering layer may be disposed on a backside of the substrate.








 
 
  Recently Added Patents
Vehicles with electric motor
Leadless integrated circuit packaging system and method of manufacture thereof
Method and system for automatically identifying wireless signal quality of a region
Imaging lens having five lens elements, and electronic apparatus having the same
Printable and printed articles
Coated article and method for making the same
Use of cocoa extract
  Randomly Featured Patents
Sodium alendronate preparation for local administration
Rotational phase adjusting apparatus having fluid reservoir
Stuffed toy plaything
Expandable reamer apparatus for enlarging boreholes while drilling
Disk cartridge
Ribozyme amplified diagnostics
Apparatus and method for incising
Nanoscale crystalline silicon powder
Modified eglin proteins
Hydrogen-permeable structure, method of manufacturing thereof and fuel cell using the same