Resources Contact Us Home
Fabrication of SOI with gettering layer

Image Number 2 for United States Patent #8128749.

An SOI substrate has a gettering layer of silicon-germanium (SiGe) with 5-10% Ge, and a thickness of approximately 50-1000 nm. Carbon (C) may be added to SiGe to stabilize the dislocation network. The SOI substrate may be a SIMOX SOI substrate, or a bonded SOI substrate, or a seeded SOI substrate. The gettering layer may disposed under a buried oxide (BOX) layer. The gettering layer may be disposed on a backside of the substrate.

  Recently Added Patents
Cell transport system comprising a homogeneous mixture of agarose and agarase
Sericin cationic nanoparticles for application in products for hair and dyed hair
Dot templates for object detection in images
Changing a system clock rate synchronously
Viruses lacking epithelial cell receptor entry
Method for evaluating performance characteristics of dental curing lights
Regulating a supply voltage provided to a load circuit
  Randomly Featured Patents
Triazolo-pyridazine derivatives as ligands for GABA receptors
Exercise apparatus
Liquid crystalline medium and liquid crystal device
Systems and methods of providing server initiated connections on a virtual private network
Methods and compositions for removing polychlorinated biphenyls from a contaminated surface
Semiconductor integrated circuit
Organic anti-reflective polymer and method for manufacturing thereof
Stable plumb beam optical projector
Mooring shaft