Resources Contact Us Home
Fabrication of SOI with gettering layer

Image Number 2 for United States Patent #8128749.

An SOI substrate has a gettering layer of silicon-germanium (SiGe) with 5-10% Ge, and a thickness of approximately 50-1000 nm. Carbon (C) may be added to SiGe to stabilize the dislocation network. The SOI substrate may be a SIMOX SOI substrate, or a bonded SOI substrate, or a seeded SOI substrate. The gettering layer may disposed under a buried oxide (BOX) layer. The gettering layer may be disposed on a backside of the substrate.

  Recently Added Patents
Loudspeaker grille
Access control method, information display device using the same, and information display system
OFDM control signaling in the presence of timing asynchronization in a peer-to-peer network
Database caching utilizing asynchronous log-based replication
Mobile communication terminal provided with handsfree function and controlling method thereof
Associating objects in databases by rate-based tagging
Reducing voltage stress in a flyback converter design
  Randomly Featured Patents
Method for generating a mesh representation of a region characterized by a trunk and a branch thereon
Integration circuit including a differential amplifier having a variable transconductance
Radio-channel connection controller and mobile communication network system
Catheter introducer
Process for the preparation of a tertiary perester
System and method of connection control for wireless mobile communication devices
Swimming and surfing glove
Method of recovering hydrocarbon fluids from a subterranean reservoir
Use of aromatic aldehydes as insecticides and for killing arachnids