Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Fabrication of SOI with gettering layer










Image Number 2 for United States Patent #8128749.

An SOI substrate has a gettering layer of silicon-germanium (SiGe) with 5-10% Ge, and a thickness of approximately 50-1000 nm. Carbon (C) may be added to SiGe to stabilize the dislocation network. The SOI substrate may be a SIMOX SOI substrate, or a bonded SOI substrate, or a seeded SOI substrate. The gettering layer may disposed under a buried oxide (BOX) layer. The gettering layer may be disposed on a backside of the substrate.








 
 
  Recently Added Patents
Sound producing apparatus for vehicle
Surface-emitting laser light source using two-dimensional photonic crystal
Providing multiple decode options for a system-on-chip (SoC) fabric
Imaging device
Organizer
Composite materials comprising aggregate and an elastomeric composition
Optical imaging device and imaging method for microscopy
  Randomly Featured Patents
Safety latch
Flow cell having endless loop manifold
Arrangement of a filling and filtering device in a valve body
Self-service terminal
Double-sided integrated circuit chips
Toggle latch opening and closing tool
Electrostatic air-purifying window screen
Data processing device and data copying method
Combinatorial optimization system that extracts an undersirable relationship from a present solution
System and method for collection and communication of data from multiple patient care devices