Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Photodetector and spectrometer using the same










Image Number 2 for United States Patent #8125636.

A photodiode array, having a plurality of photodiodes 12 (n-type channel regions 121), and a light entrance portion 13, formed of an opening that is used to make light to be detected by photodiodes 12 enter, are provided in a substrate 10 of a photodetector 1A having an n-type substrate 101 and a p-type epitaxial layer 102. Furthermore, a carrier capturing portion 60, for capturing carriers generated at a substrate portion near the light entrance portion 13 and removes the captured carriers to the exterior via an electrode 61, is arranged from a layer portion of the epitaxial layer 102 that is positioned between the photodiode array 11 and the light entrance portion 13. A photodetector of a simple arrangement, which, when applied to a spectrometer, enables the positioning precision of components of the spectrometer to be improved, and a spectrometer using this photodetector are thus realized.








 
 
  Recently Added Patents
Extended shooting rest
Aircraft engine mounting structure, assembly comprising this structure and associated aircraft
Microprocessor controlled, accelerometer based guitar pickup switching system
Power converter with capacitive energy transfer and fast dynamic response
Methods, systems, and compositions for calpain inhabition
Bouquet container
Method for isolating di-trimethylol propane
  Randomly Featured Patents
Method for managing the connection in an optical access network, corresponding platform, central office, and computer program product
User responsive sleep monitoring and awakening device
Casino chair with attached footrest
Semiconductor device and manufacturing method of the same
Machine for heat exchange with a product
Communication line adapter for use with a communications controller
Combined baking oven and automatic bread baking apparatus
Bumper for an automobile
Recording medium comprising ferroelectric layer, nonvolatile memory device comprising recording medium, and methods of writing and reading data for the memory device
Predicting year-2000 instruction failures