Resources Contact Us Home
Air gap interconnect structures and methods for forming the same

Image Number 11 for United States Patent #8120179.

A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.

  Recently Added Patents
Method for producing (meth)acrylic anhydride, method for storing (meth)acrylic anhydride, and method for producing (meth)acrylate
Basket for a dishwasher
Detection system and method for mobile device application
Apparatus and method for information display of portable device
Tranverse in-core probe monitoring and calibration device for nuclear power plants, and method thereof
Fuel cell module, manufacturing method thereof and unit containing several of the latter
  Randomly Featured Patents
Process of purifying and producing high purity aromatic polycarboxylic acids
Rotating electrical machine
Pressure-responsive valve for an applicator
Tire with zoned built-in sealant layer
Marine propeller carry handle and emergency spare kit
Process for producing slats for a vertical slatted venetian blind
Pager carrying case
Improved process for effecting electromagnetic bonding of plastic parts
Anti-CD6 monoclonal antibodies and their uses