Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device and photomask










Image Number 14 for United States Patent #8120116.

Shared contact holes SC1 and SC2 reach both gate electrode layers GE1 and GE2 and a drain region PIR. In a planar view, a sidewall E2 of gate electrode layers GE1 and GE2 is shifted toward a side of a sidewall E4 from a virtual extended line E1a of the sidewall E1. In a planar view, a center line of a line width D1 in a portion that shared contact holes SC1 and SC2 of gate electrode layers GE1 and GE2 reach is located while shifted with respect to a center line of a line width D2 in a portion located on channel formation regions CHN1 and CHN2 of gate electrode layers GE1 and GE2. Therefore, a semiconductor device and a photomask that can suppress an opening defect of the shared contact hole are obtained.








 
 
  Recently Added Patents
Single-power-transistor battery-charging circuit using voltage-boosted clock
Fuel injector provided with a metering servovalve of a balanced type for an internal-combustion engine
Driving assisting device
Automatic placement of precision cuts
Template fixed .beta.-hairpin loop mimetics and their use in phage display
Multichannel analog to digital converter apparatus and method for using
Methods and systems for magnetic media servo writing
  Randomly Featured Patents
Certain pyridyloxy-or-thio-phenyl propenoic acid derivatives
Portion of a lighting fixture
Direct drive sliding contact transducer
Battery authorization server
Sign fixture
Crystallization of 2,4,6,8,10,12-hexanitro-2,4,6,8,10,12-hexaazatetracyclo[5. 5.0.05,903,11]-dodecane
Spray gun washing apparatus
Escalator code-based delay-locked loop apparatus and corresponding methods
Method and apparatus for assessing available battery life in a rechargeable battery
Device to draw off card web