Resources Contact Us Home
Semiconductor device and photomask

Image Number 14 for United States Patent #8120116.

Shared contact holes SC1 and SC2 reach both gate electrode layers GE1 and GE2 and a drain region PIR. In a planar view, a sidewall E2 of gate electrode layers GE1 and GE2 is shifted toward a side of a sidewall E4 from a virtual extended line E1a of the sidewall E1. In a planar view, a center line of a line width D1 in a portion that shared contact holes SC1 and SC2 of gate electrode layers GE1 and GE2 reach is located while shifted with respect to a center line of a line width D2 in a portion located on channel formation regions CHN1 and CHN2 of gate electrode layers GE1 and GE2. Therefore, a semiconductor device and a photomask that can suppress an opening defect of the shared contact hole are obtained.

  Recently Added Patents
Systems and methods for assigning a template to an existing network configuration
Methods for determining decoding order in a MIMO system with successive interference cancellation
Auto-provisioning of network services over an Ethernet access link
Patterned MR device with controlled shape anisotropy
Alkaline battery
Semiconductor memory system having ECC circuit and controlling method thereof
Organic light emitting device connection methods
  Randomly Featured Patents
Molded door facing
Rock bit bearing material
Reversible thermosensitive coloring recording method, recording medium and recording apparatus for the recording method
Document storage and access case
Buffer solution systems for standardizing pH analyzers and electrolytes
Automated placement of signal distribution to diminish skew among same capacitance targets in integrated circuits
Device for discharging liquid or substantially liquid products from a compressible container of flexible material
Use of electroless metal coating to prevent galling of threaded tubular joints
Building with a roof having a wind deflection system