Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Low dose super deep source/drain implant










Image Number 5 for United States Patent #8120109.

A semiconductor device for reducing junction capacitance by an additional low dose super deep source/drain implant and a method for its fabrication are disclosed. In particular, the super deep implant is performed after spacer formation to significantly reduce junction capacitance in the channel region.








 
 
  Recently Added Patents
System and method for managing investment funds
Heterocyclic compounds as CCR2B antagonists
Bread basket
Flash drive
Digital X-ray detector arrangement and digital X-ray imaging method
Pausing a VoiceXML dialog of a multimodal application
Non-volatile memory cell containing a nano-rail electrode
  Randomly Featured Patents
Pad structure having a metalized region and a non-metalized region
Method and apparatus to simplify HA solution configuration in deployment model
Critical loads guided data prefetching
Integrated sample and hold circuit
Portable power tool
Method for inserting a wireline inside coiled tubing
Radial crest insert
Device for trapping extraneous gas
Honeycomb regenerator
Multi-amplifier, high power mode locked laser