Resources Contact Us Home
Low dose super deep source/drain implant

Image Number 5 for United States Patent #8120109.

A semiconductor device for reducing junction capacitance by an additional low dose super deep source/drain implant and a method for its fabrication are disclosed. In particular, the super deep implant is performed after spacer formation to significantly reduce junction capacitance in the channel region.

  Recently Added Patents
Surveillance apparatus and method for wireless mesh network
Method for assembling a camera module, and camera module
Antibodies to non-functional P2X.sub.7 receptor
Burner grate
System for setting programmable parameters for an implantable hypertension treatment device
Magnetic detection of small entities
Field of view matching in a visual prosthesis
  Randomly Featured Patents
Enhanced capacitor shape
Alcohol based natural wax cleaning and dusting composition
Current sensor
Integrated circuits with RAM and ROM fabrication options
Method of manufacturing a flexible container with integral ports and diaphragm
Light pipe for decorative illumination
Process for removal of hydroxy- and/or mercapto-substituted hydrocarbons from coal liquids
Flat panel door facing
Foldable diaper-changing table
Knife table