Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Low dose super deep source/drain implant










Image Number 5 for United States Patent #8120109.

A semiconductor device for reducing junction capacitance by an additional low dose super deep source/drain implant and a method for its fabrication are disclosed. In particular, the super deep implant is performed after spacer formation to significantly reduce junction capacitance in the channel region.








 
 
  Recently Added Patents
Systems and methods for facilitating communication with foundation fieldbus linking devices
Additives for oil recovery from reservoirs
Device and method for generating soft tissue contrast images
Ionic compound, anti-static pressure-sensitive adhesive and polarizer comprising the same
Concentrating photovoltaic system module with actuator control
Medical diagnosis, therapy, and prognosis system for invoked events and methods thereof
Providing multiple decode options for a system-on-chip (SoC) fabric
  Randomly Featured Patents
Battery using halogen as active material
Camera
Methods and apparatus for an environmental and behavioral adaptive wireless communication device
Flask for perfumery products
Display system
Method and apparatus for storing and retrieving information
Rotatable seat
Valve timing control system
Method for production of neuroblasts
Self-referencing instrument and method thereof for measuring electromagnetic properties