Resources Contact Us Home
Low dose super deep source/drain implant

Image Number 5 for United States Patent #8120109.

A semiconductor device for reducing junction capacitance by an additional low dose super deep source/drain implant and a method for its fabrication are disclosed. In particular, the super deep implant is performed after spacer formation to significantly reduce junction capacitance in the channel region.

  Recently Added Patents
Cooling structure and cooling method for control rod drive mechanism and nuclear reactor
Resistor-2 resistor (R-2R) digital-to-analog converter with resistor network reversal
System and method for improving text input in a shorthand-on-keyboard interface
Signal processing apparatus and methods
Hand sign
Providing multiple decode options for a system-on-chip (SoC) fabric
Processing data using information embedded in a data request
  Randomly Featured Patents
Fuser for reproduction apparatus with minimized temperature droop
Multilayer scrub pad
Watch having a case providing an integral bottom-plate structure
Systems and methods for managing information relating to medical fluids and containers therefor
Electronic equalization and electronic depolarization method, receiving end equipment, and communication system
Keyboard with adjustable splay and pronation pivot points
Electric switching device and a method for performing electric disconnection of a load
Apparatus for binding smoking casings
Apparatus and method for improved time synchronization of pulsed laser systems
Method for assembling coaxial cable Y-splitter assembly