Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Low dose super deep source/drain implant










Image Number 5 for United States Patent #8120109.

A semiconductor device for reducing junction capacitance by an additional low dose super deep source/drain implant and a method for its fabrication are disclosed. In particular, the super deep implant is performed after spacer formation to significantly reduce junction capacitance in the channel region.








 
 
  Recently Added Patents
Method and composition for improving skin barrier function
System and method for enhanced artificial bandwidth expansion
Image forming apparatus acquiring image processing time detected when the acquired time is longer that the previously set time and to correct output image density using generated patch pattern
Unsupervised document clustering using latent semantic density analysis
High damage threshold frequency conversion system
Laser processing a multi-device panel
Ascertaining presentation format based on device primary control determination
  Randomly Featured Patents
Non-recursive analog integrator
Composite multi-layer substrate and module using the substrate
Motor vehicle door
Solar heat collector and storage system
Electronic exposure control system for a solid state imager
Vehicle headlamp bezel
Furan-3-carboxamide derivatives and method of preparing same
Arrangement of a soot filter in the exhaust gas system of an internal combustion engine with an exhaust gas turbocharger
Thermal conductive member and electronic device using same
Polymerase chain reaction assays for monitoring antiviral therapy and making therapeutic decisions in the treatment of acquired immunodeficiency syndrome