Resources Contact Us Home Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE     Low dose super deep source/drain implant Image Number 5 for United States Patent #8120109. A semiconductor device for reducing junction capacitance by an additional low dose super deep source/drain implant and a method for its fabrication are disclosed. In particular, the super deep implant is performed after spacer formation to significantly reduce junction capacitance in the channel region.       Recently Added Patents Method of inhibiting biomaterial-induced procoagulant activity using complement inhibitors Content-based file system security Method for simulating transient heat transfer and temperature distribution of aluminum castings during water quenching Image forming apparatus, power-saving control method, and computer-readable recording medium in which power-saving control program is recorded Chrysanthemum plant named `Zanmudande` Column adapter Time-controlled release device for wireline conveyed tools   Randomly Featured Patents Holder clamp assembly Air sampling system for smoke detection Top scale balance Portable container for fish Brake device for power tool Pattern drawing method and pattern drawing apparatus Camera Drainboard Adaptive temperature control system for the supply of steam to a steam turbine Bicyclic androgen and progesterone receptor modulator compounds and methods © 2006-2008 PatentGenius. All Rights Reserved.