Resources Contact Us Home
Low dose super deep source/drain implant

Image Number 5 for United States Patent #8120109.

A semiconductor device for reducing junction capacitance by an additional low dose super deep source/drain implant and a method for its fabrication are disclosed. In particular, the super deep implant is performed after spacer formation to significantly reduce junction capacitance in the channel region.

  Recently Added Patents
Generating and modifying textual code interfaces from graphical programs
Fuel cell and a method of manufacturing a fuel cell
Egg separator
Storage device performance alignment notification
Fuser member having composite outer layer
Managing a spinlock indicative of exclusive access to a system resource
Analysis device and an analysis apparatus using the analysis device
  Randomly Featured Patents
Enhanced rate PSA process
Method and hinge structure for temporarily installing a door with a vehicle for subsequent removal from the vehicle or the temporary connection of a body half of a hinge with a door half of a
Camera having flash device
Multiple-impact shock-absorbing assembly for circuit interrupter and other apparatus
Fastening tool and fastening bolt
Endoscope with adapter
Method of making metal-polymer composite catalysts
Shape-variable optical element, optical device and image pickup apparatus
DC/DC bridge