Resources Contact Us Home
Forming a silicon nitride film by plasma CVD

Image Number 11 for United States Patent #8119545.

Provided is a plasma CVD device. In the plasma CVD device, in producing a silicon nitride film while controlling the size of a band gap by CVD, microwaves are introduced into a treatment vessel by a flat antenna having a plurality of holes. The plasma CVD is carried out under a given treatment pressure selected from a pressure range of not less than 0.1 Pa and not more than 1333 Pa at a flow ratio between a silicon-containing compound gas and a nitrogen gas (silicon-containing compound gas flow rate/nitrogen gas flow rate) selected from a range of not less than 0.005 and not more than 0.2, whereby the Si/N ratio in the film is controlled to form a silicon nitride film having a band gap size of not less than 2.5 eV and not more than 7 eV.

  Recently Added Patents
Milk frother
ZNF217 a new prognostic and predictive biomarker of recurrent invasive and metastatic phenotypes in breast cancer
Press nut
Battery grid
Plants and seeds of corn variety CV294874
Eye therapy system
Curable inks comprising surfactant-coated magnetic nanoparticles
  Randomly Featured Patents
Locking device for a rotatable latching element of a selecting device
Method and system for reducing acceleration-based wheel slip utilizing pedal-to-throttle progression tables
Method of making a casting
Wedge base lamp socket assembly
Single point magnetic contact hatch assembly
Simplified current sensing structure for MOS power devices
Method for installing driver software, information processing apparatus that employs the method, computer program for performing the method, and storage medium for storing the computer program
Methods for stabilizing gasoline mixtures
Elastomer product from epoxidized vegetable oil and gliadin
Process for cleaning a semiconductor substrate after chemical-mechanical polishing