Resources Contact Us Home
Silicon device on Si:C SOI and SiGe and method of manufacture

Image Number 7 for United States Patent #8119472.

A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate by a thermal anneal process to form a first island and second island at an nFET region and a pFET region, respectively. A layer of different material is formed on the first island and the second island. The STI relaxes and facilitates the relaxation of the first island and the second island. The first material may be deposited or grown Ge material and the second material may deposited or grown Si:C or C. A strained Si layer is formed on at least one of the first island and the second island.

  Recently Added Patents
Exterior surface configuration of vehicular taillight
Process for manufacture and resolution of 2-acylamino-3-diphenylpropanoic acid
Image forming device generating screens for remote and local access, information processing method, and computer-readable recording medium
Use of polyetheresters for rotomolding
System and method for high performance enterprise data protection
Receptor holding device
  Randomly Featured Patents
Tunnel profile control
Unattended plant watering system
Axial magnetic bearing apparatus
Double closed hydraulic mould stand
Pigmented plastics molding composition and its use
Browning materials derived from the pyrolysis of sugars and starches
Automatiac railway fastener remover
Apparatus and method for automatic X-ray control
Triacylated derivative of scirpentriol
Reclosable seamless box