Resources Contact Us Home
Silicon device on Si:C SOI and SiGe and method of manufacture

Image Number 7 for United States Patent #8119472.

A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate by a thermal anneal process to form a first island and second island at an nFET region and a pFET region, respectively. A layer of different material is formed on the first island and the second island. The STI relaxes and facilitates the relaxation of the first island and the second island. The first material may be deposited or grown Ge material and the second material may deposited or grown Si:C or C. A strained Si layer is formed on at least one of the first island and the second island.

  Recently Added Patents
Converter and measuring apparatus
Method and apparatus for providing spin-home function for mobile communication terminal
Direct converting apparatus, method for controlling the same, and control signal generation device
Method and apparatus to adjust received signal
Vehicle hood
Architectural panel with bamboo rings light density embossed surface
Amplitude-shift-keying (ASK) envelope detector and demodulation circuits
  Randomly Featured Patents
Array substrate of TFT-LCD and manufacturing method thereof
Delaying control for hydraulic motors
Electronically commutated motor, method of operating such, control circuit, laundry machine and drive therefor
Method for straightening automobile bodies
Test pattern generator
Tire for motorcycle
Element for holding a boot in position on a ski
Antenna array for moving vehicles
Vehicle air-conditioning system and control method
Electronic device for monitoring power consumption of an electro-optical display