Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Silicon device on Si:C SOI and SiGe and method of manufacture










Image Number 7 for United States Patent #8119472.

A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate by a thermal anneal process to form a first island and second island at an nFET region and a pFET region, respectively. A layer of different material is formed on the first island and the second island. The STI relaxes and facilitates the relaxation of the first island and the second island. The first material may be deposited or grown Ge material and the second material may deposited or grown Si:C or C. A strained Si layer is formed on at least one of the first island and the second island.








 
 
  Recently Added Patents
System, method, and computer program product for determining whether an electronic mail message is compliant with an etiquette policy
Fabric-backplane enterprise servers with pluggable I/O sub-system
Circuit device for preventing radiation emission in portable terminal with two cameras
Fluorescent dyes, fluorescent dye kits, and methods of preparing labeled molecules
Baseball themed hand clap maraca
Method of optimizing air mover performance characteristics to minimize temperature variations in a computing system enclosure
Prevention and treatment of oxidative stress disorders by gluthathione and phase II detoxification enzymes
  Randomly Featured Patents
Display
Rotation limiter for a lateral rotation bed
Apparatus for semiconductor wafer identification
Smart shower, a motion activated shower timer and alarm with diversion related soundbytes for entertaining or informing used to conserve energy and water
Container closure of medical tests
Method for RF network virtual end nodes
DC-DC converter and error amplifier thereof
Seismic source for use underwater
Method for the manufacture of printed circuit boards
Method for color in chromatophoric displays