Resources Contact Us Home
Silicon device on Si:C SOI and SiGe and method of manufacture

Image Number 7 for United States Patent #8119472.

A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate by a thermal anneal process to form a first island and second island at an nFET region and a pFET region, respectively. A layer of different material is formed on the first island and the second island. The STI relaxes and facilitates the relaxation of the first island and the second island. The first material may be deposited or grown Ge material and the second material may deposited or grown Si:C or C. A strained Si layer is formed on at least one of the first island and the second island.

  Recently Added Patents
Methods, devices and software applications for facilitating a development of a computer program
Methods of forming activated carbons
Automated dynamic differential data processing
Image forming apparatus and method of translating virtual memory address into physical memory address
Information terminal, setting information distribution server, right information distribution server, network connection setting program and method
Near-field optical disk having surface plasmon amplification by stimulated emission of radiation
Method and apparatus for decoding/encoding a video signal with inter-view reference picture list construction
  Randomly Featured Patents
Square construction module
Arrangement for treatment of exhausts released from an Otto engine with direct fuel injection
Saw blade
Debris vacuum selectively usable as a hand-held and wheeled unit
Ad-hoc network for routing in consideration of mobility and routing method thereof
Memory device having erasable frohmann-bentchkowsky EPROM cells that use a plate-to-floating gate coupled voltage during erasure
Compositions containing corticosteroids or analogues thereof and corticosteroid buffering effective amounts of 5-androstene 3B, 17B or 5-androstene 3B, 7B, 17B triol or analogues thereof
Trunk interface circuit with current compensation
Delay matching across semiconductor devices using input/output pads
Method and apparatus for varying the fuel ratio of an air-fuel mixture