Resources Contact Us Home
Silicon device on Si:C SOI and SiGe and method of manufacture

Image Number 7 for United States Patent #8119472.

A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate by a thermal anneal process to form a first island and second island at an nFET region and a pFET region, respectively. A layer of different material is formed on the first island and the second island. The STI relaxes and facilitates the relaxation of the first island and the second island. The first material may be deposited or grown Ge material and the second material may deposited or grown Si:C or C. A strained Si layer is formed on at least one of the first island and the second island.

  Recently Added Patents
Architecture for accelerated computer processing
Scalable security services for multicast in a router having integrated zone-based firewall
Surround sound effects provided by cell phones
Anomalous data detection method
Blue box
Single-pass Barankin Estimation of scatterer height from SAR data
Electromagnetic shield for a passive electronic component in an active medical device implantable lead
  Randomly Featured Patents
Adaptive control system for noise cancellation
Lubricant distribution determination by neutron radiography
Headband squirter
Ultrasonic liquid level monitoring system
Cloth band
Imaging system for correction of perceptual distortion in wide angle images
Handle for sports equipment
Boot with lacing guides
Method and apparatus for driving a thin-film EL panel
Method of passivating of low dielectric materials in wafer processing