Resources Contact Us Home
Silicon device on Si:C SOI and SiGe and method of manufacture

Image Number 7 for United States Patent #8119472.

A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate by a thermal anneal process to form a first island and second island at an nFET region and a pFET region, respectively. A layer of different material is formed on the first island and the second island. The STI relaxes and facilitates the relaxation of the first island and the second island. The first material may be deposited or grown Ge material and the second material may deposited or grown Si:C or C. A strained Si layer is formed on at least one of the first island and the second island.

  Recently Added Patents
Protective circuit board and battery pack using the same
Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications
Television apparatus
Vending machine
Display system with mounting assemblies and associated methods
Process for producing polyols
  Randomly Featured Patents
Focal-length adjusting unit for photographing apparatuses
Manipulation lever connection structure of vehicle
Land levelling machine
Air pressure driven vacuum sewer system
Method for manufacturing semiconductor device
RF amplifier
Process for automatic measurement of specific filtration resistance and electrostatic charge of a fibrous dispersion
Hand-mounted squeegee
Power delivery system
Non-wovens of electret fiber mixtures having an improved charge stability