Resources Contact Us Home
Thin film transistor and method for fabricating the same

Image Number 6 for United States Patent #8119465.

A method of fabricating a thin film transistor including: forming a gate on a substrate; forming a gate insulation layer on the substrate to cover the gate; forming an oxide semiconductor layer on the gate insulation layer; forming a translucent layer on a partial region of the oxide semiconductor layer; performing an optical annealing process to transform the oxide semiconductor layer into an oxide channel layer and two ohmic contact layers by using the translucent layer as a mask, where the oxide channel layer is located under the translucent layer, and the ohmic contact layers are respectively located beside the oxide channel layer and are connected with the oxide channel layer; and forming a source and a drain electrically insulated from each other on the gate insulation layer and the ohmic contact layers.

  Recently Added Patents
AC/DC converter
Contact sensor, driver device, and care bed
Method and device for accessing the documentation of an aircraft according to alarms generated therein
Acceleration based mode switch
Method of controlling semiconductor device, signal processing method, semiconductor device, and electronic apparatus
Medical diagnosis, therapy, and prognosis system for invoked events and methods thereof
Optical navigation device with image sensor and inner housing
  Randomly Featured Patents
Method for producing an elongated sintered article
System and method for multiple band transmission
Wear resistant rock crusher impeller and method
Modular wall or double wall element for dry assembly
Destaticizer and image forming apparatus employing the same
Contact key switch and method for its manufacturing the same
Wheeled vehicle for stringing a cable
Semiconductor device with a convex heat sink
Transponder inlay with antenna breaking layer for a document for personal identification, and a method for producing a transponder inlay