Resources Contact Us Home
Thin film transistor and method for fabricating the same

Image Number 6 for United States Patent #8119465.

A method of fabricating a thin film transistor including: forming a gate on a substrate; forming a gate insulation layer on the substrate to cover the gate; forming an oxide semiconductor layer on the gate insulation layer; forming a translucent layer on a partial region of the oxide semiconductor layer; performing an optical annealing process to transform the oxide semiconductor layer into an oxide channel layer and two ohmic contact layers by using the translucent layer as a mask, where the oxide channel layer is located under the translucent layer, and the ohmic contact layers are respectively located beside the oxide channel layer and are connected with the oxide channel layer; and forming a source and a drain electrically insulated from each other on the gate insulation layer and the ohmic contact layers.

  Recently Added Patents
Charged particle beam apparatus
Laser protection polymeric materials
Switchable memory diodes based on ferroelectric/conjugated polymer heterostructures and/or their composites
Process for the preparation of diene polymers of statistical vinylarene-diene copolymers
Audio signal clip detection
Image capture and identification system and process
Image generation device with optimized dose control
  Randomly Featured Patents
Method for coding an audio signal
Electronic package clamping arrangement
Continuous verification system
Show desk and shipping platform
Mechanism for detaching blade segments from a segmented knife blade
Method of forming hydroformed member with opening
Method for experimentally verifying imaging errors in photomasks
Predistortion linearizer using cascaded lower-order linearizers
Vibration apparatus and methods of vibration
Load distribution system, load distribution method, apparatuses constituting load distribution system, and program