Resources Contact Us Home
Thin film transistor and method for fabricating the same

Image Number 6 for United States Patent #8119465.

A method of fabricating a thin film transistor including: forming a gate on a substrate; forming a gate insulation layer on the substrate to cover the gate; forming an oxide semiconductor layer on the gate insulation layer; forming a translucent layer on a partial region of the oxide semiconductor layer; performing an optical annealing process to transform the oxide semiconductor layer into an oxide channel layer and two ohmic contact layers by using the translucent layer as a mask, where the oxide channel layer is located under the translucent layer, and the ohmic contact layers are respectively located beside the oxide channel layer and are connected with the oxide channel layer; and forming a source and a drain electrically insulated from each other on the gate insulation layer and the ohmic contact layers.

  Recently Added Patents
Powerline communication receiver
Switching element for a valve train of an internal combustion engine
Access control method, information display device using the same, and information display system
Vehicle exterior
Wine cellar alarm system
FET device having ultra-low on-resistance and low gate charge
Method and system for enabling rendering of electronic media content via a secure ad hoc network configuration utilizing a handheld wireless communication device
  Randomly Featured Patents
2-substituted ergolines useful as neuroleptics and antidepressants
Display carton
Motor assembly for pneumatic tool
Agricultural baler
Mass flow controller automation method and related system
Receiver-drier for use in an air conditioning system
Dental instrument and method for positioning a lingual orthodontic bracket
Architectural support for execution control of prologue and eplogue periods of loops in a VLIW processor
Substituted oxazoles for the treatment of inflammation
Superconducting rotating electrical machine