Resources Contact Us Home
Thin film transistor and method for fabricating the same

Image Number 6 for United States Patent #8119465.

A method of fabricating a thin film transistor including: forming a gate on a substrate; forming a gate insulation layer on the substrate to cover the gate; forming an oxide semiconductor layer on the gate insulation layer; forming a translucent layer on a partial region of the oxide semiconductor layer; performing an optical annealing process to transform the oxide semiconductor layer into an oxide channel layer and two ohmic contact layers by using the translucent layer as a mask, where the oxide channel layer is located under the translucent layer, and the ohmic contact layers are respectively located beside the oxide channel layer and are connected with the oxide channel layer; and forming a source and a drain electrically insulated from each other on the gate insulation layer and the ohmic contact layers.

  Recently Added Patents
System and method for managing investment funds
Method for forming ventilation holes in an electrode plate
Control unit of a ride level control system, and ride level control system
Device in a system operating with CAN-protocol and in a control and/or supervision system
Method for processing an algae medium containing algae microorganisms to produce algal oil and by-products
System and method for access of user accounts on remote servers
  Randomly Featured Patents
Portable radiotelephone
Reflectance and/or transmissive pulse oximeter
Pipe coupling
Ladder for boarding small boats
Self adjusting device for removal of obstructions from drain pipes
Superjunction trench device and method
Alignment apparatus and associated methods for depth images
Method and apparatus for forming extruded striped plastic products with variations in width of the stripes along the length of the products and for blow molding articles formed from such extru
Butyl elastomeric compositions having reduced permeability to gases