Resources Contact Us Home
Resistance RAM having oxide layer and solid electrolyte layer, and method for operating the same

Image Number 4 for United States Patent #8116116.

A resistance RAM includes a first electrode, an oxide layer that is formed on the first electrode, a solid electrolyte layer that is disposed on the oxide layer, and a second electrode that is disposed on the solid electrolyte layer. A method of forming the resistance RAM includes forming a conductive tip in the oxide layer by applying reference voltage to any one of the electrodes of the resistance RAM, and applying foaming voltage to the remaining one, such that the oxide layer is electrically broken. A conductive filament is formed in the solid electrolyte layer by applying a positive voltage to the second electrode, and the conductive filament that is formed in the solid electrolyte layer is removed by applying a negative voltage to the second electrode.

  Recently Added Patents
Method and apparatus for producing homogeneous magnetic fields
Tube lighting fixture
Electromagnetic probe for measuring properties of a subsurface formation
Advanced joint detection in a TD-SCDMA system
Rechargeable battery
Method for selective deposition of a semiconductor material
White polyester film and surface light source therewith
  Randomly Featured Patents
Interactive communication apparatus and status signaling method
Enriched or purified population of motor neurons and its preparation from a population of embryonic stem cells
Combination structure of guide rail member for kimchi storage device
Tandem wheel truck fender
Gate sidewall spacer and method of manufacture therefor
System and method for providing secure communication between computer systems
Method for minimizing generator load on internal combustion engine
Chamber cleaning mechanism
A-21978 Antibiotics and process for their production