Resources Contact Us Home
Resistance RAM having oxide layer and solid electrolyte layer, and method for operating the same

Image Number 4 for United States Patent #8116116.

A resistance RAM includes a first electrode, an oxide layer that is formed on the first electrode, a solid electrolyte layer that is disposed on the oxide layer, and a second electrode that is disposed on the solid electrolyte layer. A method of forming the resistance RAM includes forming a conductive tip in the oxide layer by applying reference voltage to any one of the electrodes of the resistance RAM, and applying foaming voltage to the remaining one, such that the oxide layer is electrically broken. A conductive filament is formed in the solid electrolyte layer by applying a positive voltage to the second electrode, and the conductive filament that is formed in the solid electrolyte layer is removed by applying a negative voltage to the second electrode.

  Recently Added Patents
All-in-one information handling system
Messenger bag
Haworthia plant named `CAPETOWN`
Methods of packaging imager devices and optics modules, and resulting assemblies
Method, apparatus and computer program product for providing metadata entry
Method for producing male sterile plants using plant beclin 1/ATG6 expression
Reliability fire pressure switch
  Randomly Featured Patents
Process for preparing 4-deoxyerythromycin derivatives
Submersible chamber water heater
Automated longitudinal position translator for ultrasonic imaging probes, and methods of using same
Pipe clip with vibration-isolating insert
Isolated thermal interface
Abnormality detection alarm circuit for output circuit
Signal processing apparatus
Capping mechanism driven by paper transport
Sensors and related devices and methods
Replenishment of prepaid accounts during multimedia sessions