Resources Contact Us Home
Resistance RAM having oxide layer and solid electrolyte layer, and method for operating the same

Image Number 4 for United States Patent #8116116.

A resistance RAM includes a first electrode, an oxide layer that is formed on the first electrode, a solid electrolyte layer that is disposed on the oxide layer, and a second electrode that is disposed on the solid electrolyte layer. A method of forming the resistance RAM includes forming a conductive tip in the oxide layer by applying reference voltage to any one of the electrodes of the resistance RAM, and applying foaming voltage to the remaining one, such that the oxide layer is electrically broken. A conductive filament is formed in the solid electrolyte layer by applying a positive voltage to the second electrode, and the conductive filament that is formed in the solid electrolyte layer is removed by applying a negative voltage to the second electrode.

  Recently Added Patents
Optical modulation element
Wireless refrigerant scale platform
Image processing apparatus, image display apparatus, and image processing method
Lighting apparatus
Image forming apparatus and method
Low drop-out regulator providing constant current and maximum voltage limit
Flip flop shoe
  Randomly Featured Patents
Storage container with retractable stands
Process for preparing 7-trialkylsilyl baccatin III
Accusto-optic time-integrating correlator for processing broadband doppler-shifted signals
Data storage system having separate data transfer section and message network having bus arbitration
Ablative catheter with conformable body
Method for evaluating parameters related to the elastic properties of subsurface earth formations
PLL circuit having filter with switched bias voltage for quick response
Round baler apron tensioning system
Security-based order processing technique
Electronic component having structure for preventing separation at adhered portions