Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Reversible top/bottom MEMS package










Image Number 5 for United States Patent #8115283.

A semiconductor device has a base substrate having a plurality of metal traces and a plurality of base vias. An opening is formed through the base substrate. At least one die is attached to the first surface of the substrate and positioned over the opening. A cover substrate has a plurality of metal traces. A cavity in the cover substrate forms side wall sections around the cavity. The cover substrate is attached to the base substrate so the at least one die is positioned in the interior of the cavity. Ground planes in the base substrate are coupled to ground planes in the cover substrate to form an RF shield around the at least one die.








 
 
  Recently Added Patents
Process for producing liquid crystal element, and liquid crystal element
Apparatus and method for information display of portable device
Content distribution system, mobile communication terminal device, and computer readable medium
Electric power supply system and electric power supply system for motor vehicle
Electronic device including predicted frequency error estimation of a voltage controlled oscillator and related methods
Methods and compositions to treat and detect misfolded-SOD1 mediated diseases
Monitoring of undesirable fluid ingress into subsea control modules
  Randomly Featured Patents
Responsive biomedical composites
Modified polyamide matrices and methods for their preparation
Dispenser
Production method of plasma display panel suitable for minute cell structure, the plasma panel, and apparatus for displaying the plasma display panel
Reciprocating engine with rocker-arm valve control
Method of forming patterns for semiconductor device
Youth sport helmet
Semiconductor laser including periodic structures with different periods for producing a single wavelength of light
Traction coefficient control for a continuously variable transmission
Device comprising a bipolar semi-conducting film