Resources Contact Us Home
Silicon dioxide cantilever support and method for silicon etched structures

Image Number 15 for United States Patent #8115272.

An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.

  Recently Added Patents
Clock phase recovery apparatus
Creation and use of test cases for automated testing of media-based applications
Disk drive increasing capacity by adjusting a servo gate during write operations
Light-emitting device
Retrievable outgoing audio messaging
Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer
Wire catalyst for hydrogenation/dehydrogenation reaction and manufacturing method therefor
  Randomly Featured Patents
Heat exchanger or solar collector
Electronic device and user interface display method thereof
Diisopropylbenzene containing solvent and method of developing flexographic printing plates
Methods for electrokinetic delivery of medicaments
Vegetable oil esterified lipoic acid
Topical antimicrobial composition and uses
Variable assist power steering control valve
Method and apparatus for distributed polyphase spread spectrum communications
Method and apparatus for on-line testing of the stiffness or strength of panels and especially of wood panels