Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Silicon dioxide cantilever support and method for silicon etched structures










Image Number 15 for United States Patent #8115272.

An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.








 
 
  Recently Added Patents
Non-volatile memory devices including vertical NAND channels and methods of forming the same
Upbound input/output expansion request and response processing in a PCIe architecture
Plant container
Circumcision testing and training model
Automatic evaluation of line weights
Use of yttrium, zirconium, lanthanum, cerium, praseodymium and/or neodymium as reinforcing agent for an anticorrosion coating composition
Collapsible vehicle awning
  Randomly Featured Patents
Method for providing electrically fusible links in copper interconnection
Process for producing pyromellitic acid
Nozzle cover of air brush
Precursors for insecticides
Multi-function remote control
FM Noise suppressor
Photodetector device having stacked structure with improved response rate
Anisotropic polymers
Heat-assisted magnetic recording with shaped magnetic and thermal fields
Method for producing an alkali metal hydroxide