Resources Contact Us Home
Silicon dioxide cantilever support and method for silicon etched structures

Image Number 15 for United States Patent #8115272.

An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.

  Recently Added Patents
System and method for producing statistically valid assay means and ranges for quality control materials
Cancer treatment kits comprising therapeutic antibody conjugates that bind to aminophospholipids
Proximity-based mobile message delivery
Actuators and moveable elements with position sensing
Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly
Communication network management system, method and program, and management computer
Power semiconductor module
  Randomly Featured Patents
Radar-based method of level measurement
Rear bumper for a vehicle
Polymeric materials
Interlock latch assembly for releasably securing cowl sections of an outboard motor
Pilot operated pressure valve
Exposure slit with light reflection hood
Microcontroller for providing remote control of electrical switches
Laser canaliculostomy eye-treatment
Catheter information clip
Satellite receiver retuning system