Resources Contact Us Home
Silicon dioxide cantilever support and method for silicon etched structures

Image Number 15 for United States Patent #8115272.

An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.

  Recently Added Patents
Remote browsing session management
System for illuminating an original using additional colors and capturing an image thereof
Method for ensuring DPT compliance with autorouted metal layers
Providing enhanced content
Network protection using network coding
Establishing secure communication between an implantable medical device and an external device
System and method of generating a radio frequency signal
  Randomly Featured Patents
Plate forming and break down pizza box
System, method and computer program product for providing multiple modes of communication between an advertiser and a user
Outdoor cat shelter
Changer-equipped disc player
Hub sleeve for a bicycle hub
Drum brake actuating device
Composite polymer-glass edge cladding for laser disks
Timing signal recovery circuit for a data transmission system
5 valve large bore manifold
Rate adaptive digital subscriber line ("RADSL") modem