Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Silicon dioxide cantilever support and method for silicon etched structures










Image Number 15 for United States Patent #8115272.

An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.








 
 
  Recently Added Patents
Editing device and editing method
Case for electronic device
Memory access monitoring method and device
Battery terminal with current sensor
Electrophoresis display having touch screen and method for driving the touch screen
Lamp body with integrally molded heat sink
Method and system for producing fluoride gas and fluorine-doped glass or ceramics
  Randomly Featured Patents
Medicinal compositions for use as a skin moisturizer and the treatment of exzema
Flexible circular linking means
Heterodyne interferometer with angstrom-level periodic nonlinearity
Hydrokinetic and wind energy harvester
Method for determining the concentration of a substance in a gas
Pneumatically driven liquified gas booster pump
Mutli-panel display system and method for operating the same
Insole having a transparent portion and a sock liner portion
Production of dicarboxylic acids
Method and system of remote diagnostic, control and information collection using a dynamic linked library