Resources Contact Us Home
Silicon dioxide cantilever support and method for silicon etched structures

Image Number 15 for United States Patent #8115272.

An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.

  Recently Added Patents
Polarization-coupled ferroelectric unipolar junction memory and energy storage device
Pressure-sensitive adhesive composition having an improved release behavior
Dielectric insulation medium
Traveling vehicle system and self-diagnosis method for the traveling vehicle system
Self-diagnostic method and system for implantable cardiac device
Difference detecting apparatus, difference output apparatus, and medium
Radiation protective garment with forced ventilation and method
  Randomly Featured Patents
Method for enhancing implantation of thin leads
Methods for making tertiary phosphine oxides
System and method for manufacturing and after-market support using as-built data
Apparatus for producing a directional unit force
Device for dewatering of a paper web including prepressing with extended nip shoe
Apparatus for addressing a larger number of instruction addressable central processor registers than can be identified by a program instruction
Method of and apparatus for manipulating line weight in an image
Terminal chain link with built-in indicator
Jet engine thrust reverser
Air bag cover assembly