Resources Contact Us Home
Silicon dioxide cantilever support and method for silicon etched structures

Image Number 15 for United States Patent #8115272.

An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.

  Recently Added Patents
Video processing system and device with encoding and decoding modes and method for use therewith
Method for incubating the contents of a receptacle
Method and apparatus for producing homogeneous magnetic fields
Optical modulation element
Candle holder
Prevention and treatment of osteoarthritis
Method and apparatus for eliminating a motor vehicle tip-over risk
  Randomly Featured Patents
Method of incentivising members of a disease management programme to comply with the programme
Optical recording/reproducing method, system, and program
Power control technique of radio communication system
Coverage detection and indication in multimedia radiocommunication system
Internal combustion engine with supercharger of positive displacement design
Radiation cured, high temperature pressure-sensitive adhesive
Indicator lamp with simplified optical structure
Apparatus for upward and downward movement of an arm in a robot system for taking out injection molded and die casting products
Pinch valve
Banknote validator