Resources Contact Us Home
Silicon dioxide cantilever support and method for silicon etched structures

Image Number 15 for United States Patent #8115272.

An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.

  Recently Added Patents
FET device having ultra-low on-resistance and low gate charge
Etching composition
Support for a parameterized query/view in complex event processing
Plants and seeds of corn variety CV092363
Method and apparatus for disease diagnosis and screening using extremely low frequency electromagnetic fields
3D image generating method, 3D animation generating method, and both 3D image generating module and 3D animation generating module thereof
Brushless electric motor or generator in shell construction
  Randomly Featured Patents
Process for the alpha-monoalkylation of arylacetonitriles, arylacetoesters and arylacetic acids
Liquid propulsion device incorporating a pyrotechnic gas generator in the structure thereof
Hammer with selectively actuated auxiliary head
Drying device
Shift range switching apparatus and method for switching shift range
Lubrication system using valves to meet various engine oil pressure requirements
Detection of undesired connection between conductive structures within multiple layers on a semiconductor wafer
Chromate-generating corrosion inhibitor
Anti-torpedo stern defense system
Method, circuit and system for erasing one or more non-volatile memory cells