Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Silicon dioxide cantilever support and method for silicon etched structures










Image Number 15 for United States Patent #8115272.

An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.








 
 
  Recently Added Patents
Computer product, information retrieval method, and information retrieval apparatus
Reception circuit and signal reception method
Sonic fast-sync system and method for bluetooth
Visual physician office systems and methods
Defect inspection method and device therefor
Systems, methods and apparatus for payment processing
Method of and apparatus for laser drilling holes with improved taper
  Randomly Featured Patents
Reactive system safety verification device, method, program, and recording medium containing the program
Optical disk device and optical disk discriminating method
System for dithering solenoids of hydraulically operated valves after engine ignition shut-off
Near lossless data compression method using nonuniform sampling
Nebulizer bottle
Hosiery holder
Reconfigurable mailing machine for printing and opening mailpieces
Objective lens device, optical pickup device, optical-disc driving device and driving method of objective lens
Attachment members arranged for weld fastening to a metallic base
Method and apparatus for detection of particles