Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Shared contact structure, semiconductor device and method of fabricating the semiconductor device










Image Number 7 for United States Patent #8114730.

A shared contact structure, semiconductor device and method of fabricating the semiconductor device, in which the shared contact structure may include a gate electrode disposed on an active region of a substrate and including facing first and second sidewalls. The first sidewall may be covered with an insulating spacer. The source/drain regions may be formed within the active region adjacent the first sidewall, and provided on the opposite side of the second sidewall. A corner protection pattern may be formed adjacent the source/drain regions and the insulating spacer, and covered by an inter-layer dielectric. A shared contact plug may be formed through the inter-layer dielectric, to be in contact with the gate electrode, corner protection pattern and source/drain regions.








 
 
  Recently Added Patents
Hydrogen generation device and fuel cell system
Real ear measurement system using thin tube
Detection of bioagents using a shear horizontal surface acoustic wave biosensor
Processing autocomplete suggestions
Integrated circuit packaging system with an integral-interposer-structure and method of manufacture thereof
Method of sheet alignment and method of post-processing comprising the same and method of image formation
Architecture for accelerated computer processing
  Randomly Featured Patents
Device for preventing the unauthorized removal of fuel from the tank of a motor vehicle
Method and system for designing a graphical user interface for an electronic consumer product
Air separation
Fuser member
Efficient verification of recognition results
Microcomputer
Method and system for warming up catalytic converter for cleaning up exhaust gas
Wintertime exercise device
Optical pickup
Lamp shade