Resources Contact Us Home
Shared contact structure, semiconductor device and method of fabricating the semiconductor device

Image Number 7 for United States Patent #8114730.

A shared contact structure, semiconductor device and method of fabricating the semiconductor device, in which the shared contact structure may include a gate electrode disposed on an active region of a substrate and including facing first and second sidewalls. The first sidewall may be covered with an insulating spacer. The source/drain regions may be formed within the active region adjacent the first sidewall, and provided on the opposite side of the second sidewall. A corner protection pattern may be formed adjacent the source/drain regions and the insulating spacer, and covered by an inter-layer dielectric. A shared contact plug may be formed through the inter-layer dielectric, to be in contact with the gate electrode, corner protection pattern and source/drain regions.

  Recently Added Patents
Keyswitch controller
Signal processor and signal processing method
RF amplifier with digital filter for polar transmitter
Methods and apparatus for adapting network characteristics in telecommunications systems
Maintenance tool of control systems
Magnetic circuit and speaker using same
Transmitting apparatus and retransmitting method
  Randomly Featured Patents
Idle control system of direct-cylinder-fuel-injection spark-ignition engine
Roll with blades rotatably mounted within it in the forming section of a paper machine
Medical device for selective intrathecal spinal cooling in aortic surgery and spinal trauma
Mechanical tensioner with damping feature
Liquid mixing paddle having disposable sleeve
GRF Analogs
Photoreceptor for electrophotography
Outside corner patch for TPO roofing
System and method for detecting dropping amount of liquid crystal
Process for the preparation of metachlorophenols