Resources Contact Us Home
Shared contact structure, semiconductor device and method of fabricating the semiconductor device

Image Number 7 for United States Patent #8114730.

A shared contact structure, semiconductor device and method of fabricating the semiconductor device, in which the shared contact structure may include a gate electrode disposed on an active region of a substrate and including facing first and second sidewalls. The first sidewall may be covered with an insulating spacer. The source/drain regions may be formed within the active region adjacent the first sidewall, and provided on the opposite side of the second sidewall. A corner protection pattern may be formed adjacent the source/drain regions and the insulating spacer, and covered by an inter-layer dielectric. A shared contact plug may be formed through the inter-layer dielectric, to be in contact with the gate electrode, corner protection pattern and source/drain regions.

  Recently Added Patents
Apparatus and method for transmitting and receiving data streams in wireless system
Scanning transmission electron microscope and axial adjustment method thereof
Tablet computer
Nacelle cover
Network attachment for IMS systems for legacy CS UE with home node B access
Sample analysis and/or sample processing system
  Randomly Featured Patents
Air conditioning apparatus for cars
Cardboard/paperboard box with internal, removable, temporary tattoo
Golf club storing device
Piezoelectric coaxial cable
Density classification of particulate materials by elutriation methods
Turbine powered toothbrush having gear flushing system
Suction tube with switching element
Electric motor
Non-Cu-based cast Al alloy and method for heat treatment thereof
Infant care apparatus with uniform flow pattern