Resources Contact Us Home
Shared contact structure, semiconductor device and method of fabricating the semiconductor device

Image Number 7 for United States Patent #8114730.

A shared contact structure, semiconductor device and method of fabricating the semiconductor device, in which the shared contact structure may include a gate electrode disposed on an active region of a substrate and including facing first and second sidewalls. The first sidewall may be covered with an insulating spacer. The source/drain regions may be formed within the active region adjacent the first sidewall, and provided on the opposite side of the second sidewall. A corner protection pattern may be formed adjacent the source/drain regions and the insulating spacer, and covered by an inter-layer dielectric. A shared contact plug may be formed through the inter-layer dielectric, to be in contact with the gate electrode, corner protection pattern and source/drain regions.

  Recently Added Patents
Real-time pricing of shipping vendors
Double patterning method using tilt-angle deposition
Wireless monitoring in process applications
Soybean cultivar BY0811143
Electron-beam lithography method with correction of line ends by insertion of contrast patterns
Bi-directional pattern dependent noise prediction
System and method for providing definitions
  Randomly Featured Patents
Rotatable and releasable sports ball display mechanism
Optical apparatus
Bag packaging machine and method
High-pressure pump for a fuel, with sump in communication with the fuel
Macrolide compound
High torque expandable socket ratchet wrench
Portable self-contained cooler/freezer apparatus for use on airplanes, common carrier type unrefrigerated truck lines, and the like
Orientated group IV-VI semiconductor structure, and method for making and using the same
Method for making containers such as bottles having a self-stabilizing base