Resources Contact Us Home
Shared contact structure, semiconductor device and method of fabricating the semiconductor device

Image Number 7 for United States Patent #8114730.

A shared contact structure, semiconductor device and method of fabricating the semiconductor device, in which the shared contact structure may include a gate electrode disposed on an active region of a substrate and including facing first and second sidewalls. The first sidewall may be covered with an insulating spacer. The source/drain regions may be formed within the active region adjacent the first sidewall, and provided on the opposite side of the second sidewall. A corner protection pattern may be formed adjacent the source/drain regions and the insulating spacer, and covered by an inter-layer dielectric. A shared contact plug may be formed through the inter-layer dielectric, to be in contact with the gate electrode, corner protection pattern and source/drain regions.

  Recently Added Patents
Digital camera dock having movable guide pins
Plastic floor-wall transition methods, materials, and apparatus
Sensor system
ZnO green luminescent material and its preparation
Multi-state DC-DC converter having undirectional switches
Physiological measuring system comprising a garment in the form of a sleeve or glove and sensing apparatus incorporated in the garment
Efficient paging in a wireless communication system
  Randomly Featured Patents
Battery booster
Reinforcing brace frame
Phenylaminopropanol derivatives and methods of their use
Electronic postage metering system
Process for preparing 4-phenyl-1,3-benzodiazepines
System and method for performing a comprehensive comparison of system designs
Synchronous dubbing system and method thereof
Input shaft sleeve for a clutch release assembly
Amplifying circuit with distortionless outputs
Beverage packaging method and apparatus