Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of forming dielectric including dysprosium and scandium by atomic layer deposition and integrated circuit device including the dielectric layer










Image Number 8 for United States Patent #8105930.

In one embodiment, the method of forming a dielectric layer includes supplying a first precursor at a temperature less than 400 degrees Celsius to a chamber including a substrate. The first precursor includes dysprosium. A first reaction gas is supplied to the chamber to react with the first precursor. A second precursor is supplied at a temperature less than 400 degrees Celsius to the chamber, and the second precursor includes scandium. A second reaction gas is supplied to the chamber to react with the second precursor.








 
 
  Recently Added Patents
Luminescent substrate for liciferase
Trash bag retention device
Method and system for detecting data modification within computing device
5-HT.sub.3 receptor modulators, methods of making, and use thereof
Isolated Australian coral reef fluorescent proteins and cell-based kinase or phosphatase platforms for cancer drug development
Arrangements and method relating to communication bearers
Orthogonal tunable antenna array for wireless communication devices
  Randomly Featured Patents
Vehicle front structure
Fiber reinforced centrifuge rotor
Image processing apparatus and method and storage medium storing program
Continuous fan control in a multi-zone HVAC system
Substrate carrying device, substrate carrying method and computer-readable storage medium
Projectiles for smooth bore shooting guns
Planetary gear
Evaporative cooler stand
Backlight module and light emitting diode module thereof
Cut-off mechanism for clip attachment apparatus