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Method of forming dielectric including dysprosium and scandium by atomic layer deposition and integrated circuit device including the dielectric layer










Image Number 4 for United States Patent #8105930.

In one embodiment, the method of forming a dielectric layer includes supplying a first precursor at a temperature less than 400 degrees Celsius to a chamber including a substrate. The first precursor includes dysprosium. A first reaction gas is supplied to the chamber to react with the first precursor. A second precursor is supplied at a temperature less than 400 degrees Celsius to the chamber, and the second precursor includes scandium. A second reaction gas is supplied to the chamber to react with the second precursor.








 
 
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