Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Fully-buffered dual in-line memory module with fault correction










Image Number 11 for United States Patent #8103921.

A memory system including a first memory, a content addressable memory, a testing module, and a memory controller. The first memory includes first memory cells. The content addressable memory includes second memory cells and is configured to store addresses of selected ones of the first memory cells, store data having the addresses in corresponding ones of the second memory cells, and retrieve the data from the corresponding ones of the second memory cells. The testing module is configured to determine a number of the first memory cells that fail at a first refresh rate. The first refresh rate corresponds to a time period between refreshing the first memory cells. The memory controller is configured to, based on the number of the first memory cells that fail at the first refresh rate, maintain the first refresh rate, and increase the first refresh rate.








 
 
  Recently Added Patents
Semiconductor integrated circuit device
Single eye display
Outlet socket
Differentiated PSIP table update interval technology
Absorbable polymer formulations
Firestop drain assembly
Disparate clock domain synchronization
  Randomly Featured Patents
Aligning of elongated objects
Engines driven by liquified or compressed gas
Cigarette and method of manufacture
Methods and apparatus for print control of moving a position of a non-print area
Noise and heat insulating structural component
Piezoelectric crystal microbalance device
Unloading system having vibratory bin discharge structure
Acceleration sensor and method for manufacturing an acceleration sensor
Cartridge loading and unloading mechanism
Process for the production of p-vinyl phenol polymer